Patriarche G - Search Results

1

Nanoscale electrical analyses of axial-junction GaAsP nanowires for solar cell applications.

Saket O, Himwas C, Piazza V, Bayle F, Cattoni A, Oehler F, Patriarche G, Travers L, Collin S, Julien FH, Harmand JC, Tchernycheva M. Saket O, et al. Among authors: patriarche g. Nanotechnology. 2020 Apr 3;31(14):145708. doi: 10.1088/1361-6528/ab62c9. Epub 2019 Dec 17. Nanotechnology. 2020. PMID: 31846937

2

Growth and characterization of InP nanowires with InAsP insertions.

Tchernycheva M, Cirlin GE, Patriarche G, Travers L, Zwiller V, Perinetti U, Harmand JC. Tchernycheva M, et al. Among authors: patriarche g. Nano Lett. 2007 Jun;7(6):1500-4. doi: 10.1021/nl070228l. Epub 2007 May 5. Nano Lett. 2007. PMID: 17480113

3

Why does wurtzite form in nanowires of III-V zinc blende semiconductors?

Glas F, Harmand JC, Patriarche G. Glas F, et al. Among authors: patriarche g. Phys Rev Lett. 2007 Oct 5;99(14):146101. doi: 10.1103/PhysRevLett.99.146101. Epub 2007 Oct 5. Phys Rev Lett. 2007. PMID: 17930689

4

Wurtzite to zinc blende phase transition in GaAs nanowires induced by epitaxial burying.

Patriarche G, Glas F, Tchernycheva M, Sartel C, Largeau L, Harmand JC, Cirlin GE. Patriarche G, et al. Nano Lett. 2008 Jun;8(6):1638-43. doi: 10.1021/nl080319y. Epub 2008 May 10. Nano Lett. 2008. PMID: 18471022

5

Nucleation antibunching in catalyst-assisted nanowire growth.

Glas F, Harmand JC, Patriarche G. Glas F, et al. Among authors: patriarche g. Phys Rev Lett. 2010 Apr 2;104(13):135501. doi: 10.1103/PhysRevLett.104.135501. Epub 2010 Mar 31. Phys Rev Lett. 2010. PMID: 20481891

6

Morphology of self-catalyzed GaN nanowires and chronology of their formation by molecular beam epitaxy.

Galopin E, Largeau L, Patriarche G, Travers L, Glas F, Harmand JC. Galopin E, et al. Among authors: patriarche g. Nanotechnology. 2011 Jun 17;22(24):245606. doi: 10.1088/0957-4484/22/24/245606. Epub 2011 Apr 21. Nanotechnology. 2011. PMID: 21508494

7

Temperature conditions for GaAs nanowire formation by Au-assisted molecular beam epitaxy.

Tchernycheva M, Harmand JC, Patriarche G, Travers L, Cirlin GE. Tchernycheva M, et al. Among authors: patriarche g. Nanotechnology. 2006 Aug 28;17(16):4025-30. doi: 10.1088/0957-4484/17/16/005. Epub 2006 Jul 14. Nanotechnology. 2006. PMID: 21727532

8

Zinc blende GaAsSb nanowires grown by molecular beam epitaxy.

Dheeraj DL, Patriarche G, Largeau L, Zhou HL, van Helvoort AT, Glas F, Harmand JC, Fimland BO, Weman H. Dheeraj DL, et al. Among authors: patriarche g. Nanotechnology. 2008 Jul 9;19(27):275605. doi: 10.1088/0957-4484/19/27/275605. Epub 2008 May 28. Nanotechnology. 2008. PMID: 21828712

9

Wurtzite InP/InAs/InP core-shell nanowires emitting at telecommunication wavelengths on Si substrate.

Alouane MH, Anufriev R, Chauvin N, Khmissi H, Naji K, Ilahi B, Maaref H, Patriarche G, Gendry M, Bru-Chevallier C. Alouane MH, et al. Among authors: patriarche g. Nanotechnology. 2011 Oct 7;22(40):405702. doi: 10.1088/0957-4484/22/40/405702. Epub 2011 Sep 12. Nanotechnology. 2011. PMID: 21911925

10

Composition and local strain mapping in Au-catalyzed axial Si/Ge nanowires.

Vincent L, Boukhicha R, Cherkashin N, Reboh S, Patriarche G, Renard C, Yam V, Fossard F, Bouchier D. Vincent L, et al. Among authors: patriarche g. Nanotechnology. 2012 Oct 5;23(39):395701. doi: 10.1088/0957-4484/23/39/395701. Epub 2012 Sep 7. Nanotechnology. 2012. PMID: 22962281

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