Patriarche G - Search Results

1

Quantum cascade lasers grown on silicon.

Nguyen-Van H, Baranov AN, Loghmari Z, Cerutti L, Rodriguez JB, Tournet J, Narcy G, Boissier G, Patriarche G, Bahriz M, Tournié E, Teissier R. Nguyen-Van H, et al. Among authors: patriarche g. Sci Rep. 2018 May 8;8(1):7206. doi: 10.1038/s41598-018-24723-2. Sci Rep. 2018. PMID: 29739962 Free PMC article.

2

Low temperature plasma enhanced CVD epitaxial growth of silicon on GaAs: a new paradigm for III-V/Si integration.

Cariou R, Chen W, Maurice JL, Yu J, Patriarche G, Mauguin O, Largeau L, Decobert J, Roca I Cabarrocas P. Cariou R, et al. Among authors: patriarche g. Sci Rep. 2016 May 11;6:25674. doi: 10.1038/srep25674. Sci Rep. 2016. PMID: 27166163 Free PMC article.

3

Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE.

Li X, Jordan MB, Ayari T, Sundaram S, El Gmili Y, Alam S, Alam M, Patriarche G, Voss PL, Paul Salvestrini J, Ougazzaden A. Li X, et al. Among authors: patriarche g. Sci Rep. 2017 Apr 11;7(1):786. doi: 10.1038/s41598-017-00865-7. Sci Rep. 2017. PMID: 28400555 Free PMC article.

4

Gas sensors boosted by two-dimensional h-BN enabled transfer on thin substrate foils: towards wearable and portable applications.

Ayari T, Bishop C, Jordan MB, Sundaram S, Li X, Alam S, ElGmili Y, Patriarche G, Voss PL, Salvestrini JP, Ougazzaden A. Ayari T, et al. Among authors: patriarche g. Sci Rep. 2017 Nov 9;7(1):15212. doi: 10.1038/s41598-017-15065-6. Sci Rep. 2017. PMID: 29123115 Free PMC article.

5

Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates.

Karrakchou S, Sundaram S, Ayari T, Mballo A, Vuong P, Srivastava A, Gujrati R, Ahaitouf A, Patriarche G, Leichlé T, Gautier S, Moudakir T, Voss PL, Salvestrini JP, Ougazzaden A. Karrakchou S, et al. Among authors: patriarche g. Sci Rep. 2020 Dec 10;10(1):21709. doi: 10.1038/s41598-020-77681-z. Sci Rep. 2020. PMID: 33303773 Free PMC article.

6

Strain in a silicon-on-insulator nanostructure revealed by 3D x-ray Bragg ptychography.

Chamard V, Allain M, Godard P, Talneau A, Patriarche G, Burghammer M. Chamard V, et al. Among authors: patriarche g. Sci Rep. 2015 May 18;5:9827. doi: 10.1038/srep09827. Sci Rep. 2015. PMID: 25984829 Free PMC article.

7

Atomically Sharp Interface in an h-BN-epitaxial graphene van der Waals Heterostructure.

Sediri H, Pierucci D, Hajlaoui M, Henck H, Patriarche G, Dappe YJ, Yuan S, Toury B, Belkhou R, Silly MG, Sirotti F, Boutchich M, Ouerghi A. Sediri H, et al. Among authors: patriarche g. Sci Rep. 2015 Nov 20;5:16465. doi: 10.1038/srep16465. Sci Rep. 2015. PMID: 26585245 Free PMC article.

8

Electronic properties of (Sb;Bi)₂Te₃ colloidal heterostructured nanoplates down to the single particle level.

Mir WJ, Assouline A, Livache C, Martinez B, Goubet N, Xu XZ, Patriarche G, Ithurria S, Aubin H, Lhuillier E. Mir WJ, et al. Among authors: patriarche g. Sci Rep. 2017 Aug 29;7(1):9647. doi: 10.1038/s41598-017-09903-w. Sci Rep. 2017. PMID: 28852056 Free PMC article.

9

InGaAs quantum dots grown by molecular beam epitaxy for light emission on Si substrates.

Bru-Chevallier C, El Akra A, Pelloux-Gervais D, Dumont H, Canut B, Chauvin N, Regreny P, Gendry M, Patriarche G, Jancu JM, Even J, Noe P, Calvo V, Salem B. Bru-Chevallier C, et al. Among authors: patriarche g. J Nanosci Nanotechnol. 2011 Oct;11(10):9153-9. doi: 10.1166/jnn.2011.4282. J Nanosci Nanotechnol. 2011. PMID: 22400316

10

Shear-driven phase transformation in silicon nanowires.

Vincent L, Djomani D, Fakfakh M, Renard C, Belier B, Bouchier D, Patriarche G. Vincent L, et al. Among authors: patriarche g. Nanotechnology. 2018 Mar 23;29(12):125601. doi: 10.1088/1361-6528/aaa738. Nanotechnology. 2018. PMID: 29328052

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