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Compliant Micron-Sized Patterned InGaN Pseudo-Substrates Utilizing Porous GaN.
Materials (Basel). 2020 Jan 4;13(1):213. doi: 10.3390/ma13010213.
Materials (Basel). 2020.
PMID: 31947918
Free PMC article.
Record-Low Thermal Boundary Resistance between Diamond and GaN-on-SiC for Enabling Radiofrequency Device Cooling.
Malakoutian M, Field DE, Hines NJ, Pasayat S, Graham S, Kuball M, Chowdhury S.
Malakoutian M, et al.
ACS Appl Mater Interfaces. 2021 Dec 22;13(50):60553-60560. doi: 10.1021/acsami.1c13833. Epub 2021 Dec 7.
ACS Appl Mater Interfaces. 2021.
PMID: 34875169
Free article.
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