Pan F - Search Results

1

Schottky barrier heights in two-dimensional field-effect transistors: from theory to experiment.

Wang Y, Liu S, Li Q, Quhe R, Yang C, Guo Y, Zhang X, Pan Y, Li J, Zhang H, Xu L, Shi B, Tang H, Li Y, Yang J, Zhang Z, Xiao L, Pan F, Lu J. Wang Y, et al. Among authors: pan f, pan y. Rep Prog Phys. 2021 Apr 27;84(5). doi: 10.1088/1361-6633/abf1d4. Rep Prog Phys. 2021. PMID: 33761489 Review.

2

Enhanced thermoelectric performance of Cu2CdSnSe4 by Mn doping: experimental and first principles studies.

Liu FS, Zheng JX, Huang MJ, He LP, Ao WQ, Pan F, Li JQ. Liu FS, et al. Among authors: pan f. Sci Rep. 2014 Jul 22;4:5774. doi: 10.1038/srep05774. Sci Rep. 2014. PMID: 25047225 Free PMC article.

3

Silicene nanomesh.

Pan F, Wang Y, Jiang K, Ni Z, Ma J, Zheng J, Quhe R, Shi J, Yang J, Chen C, Lu J. Pan F, et al. Sci Rep. 2015 Mar 13;5:9075. doi: 10.1038/srep09075. Sci Rep. 2015. PMID: 25766672 Free PMC article.

4

Monolayer Bismuthene-Metal Contacts: A Theoretical Study.

Guo Y, Pan F, Ye M, Sun X, Wang Y, Li J, Zhang X, Zhang H, Pan Y, Song Z, Yang J, Lu J. Guo Y, et al. Among authors: pan f, pan y. ACS Appl Mater Interfaces. 2017 Jul 12;9(27):23128-23140. doi: 10.1021/acsami.7b03833. Epub 2017 Jun 26. ACS Appl Mater Interfaces. 2017. PMID: 28597660

5

Electrical Contacts in Monolayer Arsenene Devices.

Wang Y, Ye M, Weng M, Li J, Zhang X, Zhang H, Guo Y, Pan Y, Xiao L, Liu J, Pan F, Lu J. Wang Y, et al. Among authors: pan f, pan y. ACS Appl Mater Interfaces. 2017 Aug 30;9(34):29273-29284. doi: 10.1021/acsami.7b08513. Epub 2017 Aug 21. ACS Appl Mater Interfaces. 2017. PMID: 28783298

6

Nitrogen-Doped CoP Electrocatalysts for Coupled Hydrogen Evolution and Sulfur Generation with Low Energy Consumption.

Zhou Q, Shen Z, Zhu C, Li J, Ding Z, Wang P, Pan F, Zhang Z, Ma H, Wang S, Zhang H. Zhou Q, et al. Among authors: pan f. Adv Mater. 2018 Jul;30(27):e1800140. doi: 10.1002/adma.201800140. Epub 2018 May 17. Adv Mater. 2018. PMID: 29774606

7

Many-Body Effect and Device Performance Limit of Monolayer InSe.

Wang Y, Fei R, Quhe R, Li J, Zhang H, Zhang X, Shi B, Xiao L, Song Z, Yang J, Shi J, Pan F, Lu J. Wang Y, et al. Among authors: pan f. ACS Appl Mater Interfaces. 2018 Jul 11;10(27):23344-23352. doi: 10.1021/acsami.8b06427. Epub 2018 Jun 27. ACS Appl Mater Interfaces. 2018. PMID: 29916240

8

Spontaneous valley splitting and valley pseudospin field effect transistors of monolayer VAgP₂Se₆.

Song Z, Sun X, Zheng J, Pan F, Hou Y, Yung MH, Yang J, Lu J. Song Z, et al. Among authors: pan f. Nanoscale. 2018 Aug 7;10(29):13986-13993. doi: 10.1039/c8nr04253e. Epub 2018 Jul 11. Nanoscale. 2018. PMID: 29995051

9

Sub-5 nm monolayer black phosphorene tunneling transistors.

Li H, Shi B, Pan Y, Li J, Xu L, Xu L, Zhang Z, Pan F, Lu J. Li H, et al. Among authors: pan f, pan y. Nanotechnology. 2018 Nov 30;29(48):485202. doi: 10.1088/1361-6528/aae0cb. Epub 2018 Sep 12. Nanotechnology. 2018. PMID: 30207546

10

n- and p-type ohmic contacts at monolayer gallium nitride-metal interfaces.

Guo Y , Pan F , Ren Y , Yao B , Yang C , Ye M , Wang Y , Li J , Zhang X , Yan J , Yang J , Lu J . Guo Y , et al. Among authors: pan f. Phys Chem Chem Phys. 2018 Oct 7;20(37):24239-24249. doi: 10.1039/c8cp04759f. Epub 2018 Sep 13. Phys Chem Chem Phys. 2018. PMID: 30209481

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