Pala M - Search Results

1

Strain and Spin-Orbit Coupling Engineering in Twisted WS₂/Graphene Heterobilayer.

Ernandes C, Khalil L, Henck H, Zhao MQ, Chaste J, Oehler F, Johnson ATC, Asensio MC, Pierucci D, Pala M, Avila J, Ouerghi A. Ernandes C, et al. Among authors: pala m. Nanomaterials (Basel). 2021 Oct 31;11(11):2921. doi: 10.3390/nano11112921. Nanomaterials (Basel). 2021. PMID: 34835687 Free PMC article.

2

Evidence for highly p-type doping and type II band alignment in large scale monolayer WSe₂/Se-terminated GaAs heterojunction grown by molecular beam epitaxy.

Pierucci D, Mahmoudi A, Silly M, Bisti F, Oehler F, Patriarche G, Bonell F, Marty A, Vergnaud C, Jamet M, Boukari H, Lhuillier E, Pala M, Ouerghi A. Pierucci D, et al. Among authors: pala m. Nanoscale. 2022 Apr 14;14(15):5859-5868. doi: 10.1039/d2nr00458e. Nanoscale. 2022. PMID: 35362486

3

Hybridization and localized flat band in the WSe₂/MoSe₂heterobilayer.

Khalil L, Pierucci D, Velez-Fort E, Avila J, Vergnaud C, Dudin P, Oehler F, Chaste J, Jamet M, Lhuillier E, Pala M, Ouerghi A. Khalil L, et al. Among authors: pala m. Nanotechnology. 2022 Nov 7;34(4). doi: 10.1088/1361-6528/ac9abe. Nanotechnology. 2022. PMID: 36252554

4

Unidirectional Rashba spin splitting in single layer WS_2(1-x)Se_2xalloy.

Zribi J, Pierucci D, Bisti F, Zheng B, Avila J, Khalil L, Ernandes C, Chaste J, Oehler F, Pala M, Maroutian T, Hermes I, Lhuillier E, Pan A, Ouerghi A. Zribi J, et al. Among authors: pala m. Nanotechnology. 2022 Dec 1;34(7). doi: 10.1088/1361-6528/aca0f6. Nanotechnology. 2022. PMID: 36347029

5

Quantum Confinement and Electronic Structure at the Surface of van der Waals Ferroelectric α-In₂Se₃.

Kremer G, Mahmoudi A, M'Foukh A, Bouaziz M, Rahimi M, Della Rocca ML, Le Fèvre P, Dayen JF, Bertran F, Matzen S, Pala M, Chaste J, Oehler F, Ouerghi A. Kremer G, et al. Among authors: m foukh a, pala m. ACS Nano. 2023 Oct 10;17(19):18924-18931. doi: 10.1021/acsnano.3c04186. Epub 2023 Aug 16. ACS Nano. 2023. PMID: 37585336

6

Quasi van der Waals Epitaxy of Rhombohedral-Stacked Bilayer WSe₂ on GaP(111) Heterostructure.

Mahmoudi A, Bouaziz M, Chapuis N, Kremer G, Chaste J, Romanin D, Pala M, Bertran F, Fèvre PL, Gerber IC, Patriarche G, Oehler F, Wallart X, Ouerghi A. Mahmoudi A, et al. Among authors: pala m. ACS Nano. 2023 Nov 14;17(21):21307-21316. doi: 10.1021/acsnano.3c05818. Epub 2023 Oct 19. ACS Nano. 2023. PMID: 37856436

7

High performance tunnel field effect transistors based on in-plane transition metal dichalcogenide heterojunctions.

Choukroun J, Pala M, Fang S, Kaxiras E, Dollfus P. Choukroun J, et al. Among authors: pala m. Nanotechnology. 2019 Jan 11;30(2):025201. doi: 10.1088/1361-6528/aae7df. Epub 2018 Nov 1. Nanotechnology. 2019. PMID: 30382028

8

A new transport phenomenon in nanostructures: a mesoscopic analog of the Braess paradox encountered in road networks.

Pala M, Sellier H, Hackens B, Martins F, Bayot V, Huant S. Pala M, et al. Nanoscale Res Lett. 2012 Aug 22;7(1):472. doi: 10.1186/1556-276X-7-472. Nanoscale Res Lett. 2012. PMID: 22913510 Free PMC article.

9

Scanning gate microscopy of quantum rings: effects of an external magnetic field and of charged defects.

Pala MG, Baltazar S, Martins F, Hackens B, Sellier H, Ouisse T, Bayot V, Huant S. Pala MG, et al. Nanotechnology. 2009 Jul 1;20(26):264021. doi: 10.1088/0957-4484/20/26/264021. Epub 2009 Jun 10. Nanotechnology. 2009. PMID: 19509453

10

Phonon- and surface-roughness-limited mobility of gate-all-around 3C-SiC and Si nanowire FETs.

Rogdakis K, Poli S, Bano E, Zekentes K, Pala MG. Rogdakis K, et al. Among authors: pala mg. Nanotechnology. 2009 Jul 22;20(29):295202. doi: 10.1088/0957-4484/20/29/295202. Epub 2009 Jul 1. Nanotechnology. 2009. PMID: 19567960

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