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Mitigation of Single-Event Effects in SiGe-HBT Current-Mode Logic Circuits.
Sensors (Basel). 2020 May 1;20(9):2581. doi: 10.3390/s20092581.
Sensors (Basel). 2020.
PMID: 32370003
Free PMC article.
Structure of a two-dimensional epitaxial Er silicide on Si(111) investigated by Auger-electron diffraction.
Wetzel P, Pirri C, Paki P, Bolmont D, Gewinner G.
Wetzel P, et al. Among authors: paki p.
Phys Rev B Condens Matter. 1993 Feb 15;47(7):3677-3683. doi: 10.1103/physrevb.47.3677.
Phys Rev B Condens Matter. 1993.
PMID: 10006469
No abstract available.
Item in Clipboard
Bulk electronic structure of AlB2-type erbium disilicide with and without Si vacancies.
Stauffer L, Pirri C, Wetzel P, Mharchi A, Paki P, Bolmont D, Gewinner G, Minot C.
Stauffer L, et al. Among authors: paki p.
Phys Rev B Condens Matter. 1992 Nov 15;46(20):13201-13206. doi: 10.1103/physrevb.46.13201.
Phys Rev B Condens Matter. 1992.
PMID: 10003361
No abstract available.
Item in Clipboard
Growth of a two-dimensional Er silicide on Si(111).
Paki P, Kafader U, Wetzel P, Pirri C, Peruchetti JC, Bolmont D, Gewinner G.
Paki P, et al.
Phys Rev B Condens Matter. 1992 Apr 15;45(15):8490-8493. doi: 10.1103/physrevb.45.8490.
Phys Rev B Condens Matter. 1992.
PMID: 10000685
No abstract available.
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