Search Page
Save citations to file
Email citations
Send citations to clipboard
Add to Collections
Add to My Bibliography
Create a file for external citation management software
Your saved search
Your RSS Feed
Search Results
3 results
Filters applied: . Clear all
Results are displayed in a computed author sort order.
The Results By Year timeline is not available.
Page 1
Proximity Gettering Design of Hydrocarbon⁻Molecular⁻Ion⁻Implanted Silicon Wafers Using Dark Current Spectroscopy for CMOS Image Sensors.
Sensors (Basel). 2019 May 4;19(9):2073. doi: 10.3390/s19092073.
Sensors (Basel). 2019.
PMID: 31060216
Free PMC article.
Reduction of Dark Current in CMOS Image Sensor Pixels Using Hydrocarbon-Molecular-Ion-Implanted Double Epitaxial Si Wafers.
Onaka-Masada A, Kadono T, Okuyama R, Hirose R, Kobayashi K, Suzuki A, Koga Y, Kurita K.
Onaka-Masada A, et al.
Sensors (Basel). 2020 Nov 19;20(22):6620. doi: 10.3390/s20226620.
Sensors (Basel). 2020.
PMID: 33228009
Free PMC article.
Item in Clipboard
Reduction of White Spot Defects in CMOS Image Sensors Fabricated Using Epitaxial Silicon Wafer with Proximity Gettering Sinks by CH2P Molecular Ion Implantation.
Kadono T, Hirose R, Onaka-Masada A, Kobayashi K, Suzuki A, Okuyama R, Koga Y, Fukuyama A, Kurita K.
Kadono T, et al. Among authors: onaka masada a.
Sensors (Basel). 2022 Oct 28;22(21):8258. doi: 10.3390/s22218258.
Sensors (Basel). 2022.
PMID: 36365955
Free PMC article.
Item in Clipboard
Cite
Cite