The growth of Ge and direct bandgap Ge1-xSnx on GaAs (001) by molecular beam epitaxy.
Gunder C, Maia de Oliveira F, Wangila E, Stanchu H, Zamani-Alavijeh M, Ojo S, Acharya S, Said A, Li C, Mazur YI, Yu SQ, Salamo GJ.
Gunder C, et al. Among authors: ojo s.
RSC Adv. 2024 Jan 3;14(2):1250-1257. doi: 10.1039/d3ra06774b. eCollection 2024 Jan 2.
RSC Adv. 2024.
PMID: 38174282
Free PMC article.