Oehler F - Search Results

1

Evidence for highly p-type doping and type II band alignment in large scale monolayer WSe₂/Se-terminated GaAs heterojunction grown by molecular beam epitaxy.

Pierucci D, Mahmoudi A, Silly M, Bisti F, Oehler F, Patriarche G, Bonell F, Marty A, Vergnaud C, Jamet M, Boukari H, Lhuillier E, Pala M, Ouerghi A. Pierucci D, et al. Among authors: oehler f. Nanoscale. 2022 Apr 14;14(15):5859-5868. doi: 10.1039/d2nr00458e. Nanoscale. 2022. PMID: 35362486

2

Abrupt GaP/GaAs Interfaces in Self-Catalyzed Nanowires.

Priante G, Patriarche G, Oehler F, Glas F, Harmand JC. Priante G, et al. Among authors: oehler f. Nano Lett. 2015 Sep 9;15(9):6036-41. doi: 10.1021/acs.nanolett.5b02224. Epub 2015 Aug 5. Nano Lett. 2015. PMID: 26217912

3

Sharpening the Interfaces of Axial Heterostructures in Self-Catalyzed AlGaAs Nanowires: Experiment and Theory.

Priante G, Glas F, Patriarche G, Pantzas K, Oehler F, Harmand JC. Priante G, et al. Among authors: oehler f. Nano Lett. 2016 Mar 9;16(3):1917-24. doi: 10.1021/acs.nanolett.5b05121. Epub 2016 Feb 10. Nano Lett. 2016. PMID: 26840359

4

In situ passivation of GaAsP nanowires.

Himwas C, Collin S, Rale P, Chauvin N, Patriarche G, Oehler F, Julien FH, Travers L, Harmand JC, Tchernycheva M. Himwas C, et al. Among authors: oehler f. Nanotechnology. 2017 Dec 8;28(49):495707. doi: 10.1088/1361-6528/aa9533. Nanotechnology. 2017. PMID: 29057754

5

Measuring and Modeling the Growth Dynamics of Self-Catalyzed GaP Nanowire Arrays.

Oehler F, Cattoni A, Scaccabarozzi A, Patriarche G, Glas F, Harmand JC. Oehler F, et al. Nano Lett. 2018 Feb 14;18(2):701-708. doi: 10.1021/acs.nanolett.7b03695. Epub 2018 Jan 4. Nano Lett. 2018. PMID: 29257888

6

Correlated optical and structural analyses of individual GaAsP/GaP core-shell nanowires.

Himwas C, Collin S, Chen HL, Patriarche G, Oehler F, Travers L, Saket O, Julien FH, Harmand JC, Tchernycheva M. Himwas C, et al. Among authors: oehler f. Nanotechnology. 2019 Jul 26;30(30):304001. doi: 10.1088/1361-6528/ab1760. Epub 2019 Apr 9. Nanotechnology. 2019. PMID: 30965307

7

Evidence and control of unintentional As-rich shells in GaAs_1-x P _x nanowires.

de Lépinau R, Scaccabarozzi A, Patriarche G, Travers L, Collin S, Cattoni A, Oehler F. de Lépinau R, et al. Among authors: oehler f. Nanotechnology. 2019 Jul 19;30(29):294003. doi: 10.1088/1361-6528/ab14c1. Epub 2019 Apr 29. Nanotechnology. 2019. PMID: 31032812

8

Nanoscale electrical analyses of axial-junction GaAsP nanowires for solar cell applications.

Saket O, Himwas C, Piazza V, Bayle F, Cattoni A, Oehler F, Patriarche G, Travers L, Collin S, Julien FH, Harmand JC, Tchernycheva M. Saket O, et al. Among authors: oehler f. Nanotechnology. 2020 Apr 3;31(14):145708. doi: 10.1088/1361-6528/ab62c9. Epub 2019 Dec 17. Nanotechnology. 2020. PMID: 31846937

9

Stable and high yield growth of GaP and In_0.2Ga_0.8As nanowire arrays using In as a catalyst.

Scaccabarozzi A, Cattoni A, Patriarche G, Travers L, Collin S, Harmand JC, Glas F, Oehler F. Scaccabarozzi A, et al. Among authors: oehler f. Nanoscale. 2020 Sep 17;12(35):18240-18248. doi: 10.1039/d0nr04139d. Nanoscale. 2020. PMID: 32856654

10

Strain and Spin-Orbit Coupling Engineering in Twisted WS₂/Graphene Heterobilayer.

Ernandes C, Khalil L, Henck H, Zhao MQ, Chaste J, Oehler F, Johnson ATC, Asensio MC, Pierucci D, Pala M, Avila J, Ouerghi A. Ernandes C, et al. Among authors: oehler f. Nanomaterials (Basel). 2021 Oct 31;11(11):2921. doi: 10.3390/nano11112921. Nanomaterials (Basel). 2021. PMID: 34835687 Free PMC article.

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