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Epitaxy of GaN Nanowires on Graphene.
Kumaresan V, Largeau L, Madouri A, Glas F, Zhang H, Oehler F, Cavanna A, Babichev A, Travers L, Gogneau N, Tchernycheva M, Harmand JC. Kumaresan V, et al. Among authors: oehler f. Nano Lett. 2016 Aug 10;16(8):4895-902. doi: 10.1021/acs.nanolett.6b01453. Epub 2016 Jul 26. Nano Lett. 2016. PMID: 27414518
Control of gold surface diffusion on si nanowires.
den Hertog MI, Rouviere JL, Dhalluin F, Desré PJ, Gentile P, Ferret P, Oehler F, Baron T. den Hertog MI, et al. Among authors: oehler f. Nano Lett. 2008 May;8(5):1544-50. doi: 10.1021/nl073356i. Epub 2008 Apr 19. Nano Lett. 2008. PMID: 18422363
Abrupt GaP/GaAs Interfaces in Self-Catalyzed Nanowires.
Priante G, Patriarche G, Oehler F, Glas F, Harmand JC. Priante G, et al. Among authors: oehler f. Nano Lett. 2015 Sep 9;15(9):6036-41. doi: 10.1021/acs.nanolett.5b02224. Epub 2015 Aug 5. Nano Lett. 2015. PMID: 26217912
Self-induced growth of vertical GaN nanowires on silica.
Kumaresan V, Largeau L, Oehler F, Zhang H, Mauguin O, Glas F, Gogneau N, Tchernycheva M, Harmand JC. Kumaresan V, et al. Among authors: oehler f. Nanotechnology. 2016 Apr 1;27(13):135602. doi: 10.1088/0957-4484/27/13/135602. Epub 2016 Feb 19. Nanotechnology. 2016. PMID: 26895252
Determination of n-Type Doping Level in Single GaAs Nanowires by Cathodoluminescence.
Chen HL, Himwas C, Scaccabarozzi A, Rale P, Oehler F, Lemaître A, Lombez L, Guillemoles JF, Tchernycheva M, Harmand JC, Cattoni A, Collin S. Chen HL, et al. Among authors: oehler f. Nano Lett. 2017 Nov 8;17(11):6667-6675. doi: 10.1021/acs.nanolett.7b02620. Epub 2017 Oct 23. Nano Lett. 2017. PMID: 29035545
In situ passivation of GaAsP nanowires.
Himwas C, Collin S, Rale P, Chauvin N, Patriarche G, Oehler F, Julien FH, Travers L, Harmand JC, Tchernycheva M. Himwas C, et al. Among authors: oehler f. Nanotechnology. 2017 Dec 8;28(49):495707. doi: 10.1088/1361-6528/aa9533. Nanotechnology. 2017. PMID: 29057754
41 results