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Integrated Memory Devices Based on 2D Materials.
Adv Mater. 2022 Dec;34(48):e2201880. doi: 10.1002/adma.202201880. Epub 2022 Oct 13.
Adv Mater. 2022.
PMID: 35557021
Review.
Unraveling the origin of ferroelectric resistance switching through the interfacial engineering of layered ferroelectric-metal junctions.
Xue F, He X, Ma Y, Zheng D, Zhang C, Li LJ, He JH, Yu B, Zhang X.
Xue F, et al.
Nat Commun. 2021 Dec 15;12(1):7291. doi: 10.1038/s41467-021-27617-6.
Nat Commun. 2021.
PMID: 34911970
Free PMC article.
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