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Investigation of directionally solidified InGaSb ternary alloys from Ga and Sb faces of GaSb(111) under prolonged microgravity at the International Space Station.
NPJ Microgravity. 2016 Jul 21;2:16026. doi: 10.1038/npjmgrav.2016.26. eCollection 2016.
NPJ Microgravity. 2016.
PMID: 28725736
Free PMC article.
Homogeneous InGaSb crystal grown under microgravity using Chinese recovery satellite SJ-10.
Yu J, Inatomi Y, Nirmal Kumar V, Hayakawa Y, Okano Y, Arivanandhan M, Momose Y, Pan X, Liu Y, Zhang X, Luo X.
Yu J, et al. Among authors: nirmal kumar v.
NPJ Microgravity. 2019 Apr 1;5:8. doi: 10.1038/s41526-019-0068-1. eCollection 2019.
NPJ Microgravity. 2019.
PMID: 30963108
Free PMC article.
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Growth of In x Ga1-x Sb alloy semiconductor at the International Space Station (ISS) and comparison with terrestrial experiments.
Inatomi Y, Sakata K, Arivanandhan M, Rajesh G, Nirmal Kumar V, Koyama T, Momose Y, Ozawa T, Okano Y, Hayakawa Y.
Inatomi Y, et al. Among authors: nirmal kumar v.
NPJ Microgravity. 2015 Aug 27;1:15011. doi: 10.1038/npjmgrav.2015.11. eCollection 2015.
NPJ Microgravity. 2015.
PMID: 28725715
Free PMC article.
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