Influence of Additive N2 on O2 Plasma Ashing Process in Inductively Coupled Plasma.
You YB, Lee YS, Kim SJ, Cho CH, Seong IH, Jeong WN, Choi MS, You SJ.
You YB, et al.
Nanomaterials (Basel). 2022 Oct 27;12(21):3798. doi: 10.3390/nano12213798.
Nanomaterials (Basel). 2022.
PMID: 36364574
Free PMC article.
One of the cleaning processes in semiconductor fabrication is the ashing process using oxygen plasma, which has been normally used N(2) gas as additive gas to increase the ashing rate, and it is known that the ashing rate is strongly related to the concentration of oxygen …
One of the cleaning processes in semiconductor fabrication is the ashing process using oxygen plasma, which has been normally used N( …