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Interface Trap Density Reduction for Al2O3/GaN (0001) Interfaces by Oxidizing Surface Preparation prior to Atomic Layer Deposition.
ACS Appl Mater Interfaces. 2015 Jun 17;7(23):12774-80. doi: 10.1021/acsami.5b01600. Epub 2015 Jun 2.
ACS Appl Mater Interfaces. 2015.
PMID: 25988586
Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices.
Negara MA, Kitano M, Long RD, McIntyre PC.
Negara MA, et al.
ACS Appl Mater Interfaces. 2016 Aug 17;8(32):21089-94. doi: 10.1021/acsami.6b03862. Epub 2016 Aug 8.
ACS Appl Mater Interfaces. 2016.
PMID: 27459343
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The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces.
Kent T, Tang K, Chobpattana V, Negara MA, Edmonds M, Mitchell W, Sahu B, Galatage R, Droopad R, McIntyre P, Kummel AC.
Kent T, et al. Among authors: negara ma.
J Chem Phys. 2015 Oct 28;143(16):164711. doi: 10.1063/1.4934656.
J Chem Phys. 2015.
PMID: 26520547
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