Atomically precise semiconductor--graphene and hBN interfaces by Ge intercalation.
Verbitskiy NI, Fedorov AV, Profeta G, Stroppa A, Petaccia L, Senkovskiy B, Nefedov A, Wöll C, Usachov DY, Vyalikh DV, Yashina LV, Eliseev AA, Pichler T, Grüneis A.
Verbitskiy NI, et al. Among authors: nefedov a.
Sci Rep. 2015 Dec 7;5:17700. doi: 10.1038/srep17700.
Sci Rep. 2015.
PMID: 26639608
Free PMC article.