Nastasi M - Search Results

1

Rapid and damage-free outgassing of implanted helium from amorphous silicon oxycarbide.

Su Q, Ding H, Price L, Shao L, Hinks JA, Greaves G, Donnelly SE, Demkowicz MJ, Nastasi M. Su Q, et al. Among authors: nastasi m. Sci Rep. 2018 Mar 22;8(1):5009. doi: 10.1038/s41598-018-23426-y. Sci Rep. 2018. PMID: 29568069 Free PMC article.

2

Mechanical Response of He-Implanted Amorphous SiOC/Crystalline Fe Nanolaminates.

Zare A, Su Q, Gigax J, Harriman TA, Nastasi M, Shao L, Lucca DA. Zare A, et al. Among authors: nastasi m. Sci Rep. 2019 Mar 18;9(1):4759. doi: 10.1038/s41598-019-41226-w. Sci Rep. 2019. PMID: 30886191 Free PMC article.

3

Helium Irradiation and Implantation Effects on the Structure of Amorphous Silicon Oxycarbide.

Su Q, Inoue S, Ishimaru M, Gigax J, Wang T, Ding H, Demkowicz MJ, Shao L, Nastasi M. Su Q, et al. Among authors: nastasi m. Sci Rep. 2017 Jun 20;7(1):3900. doi: 10.1038/s41598-017-04247-x. Sci Rep. 2017. PMID: 28634322 Free PMC article.

4

Resistance to Helium Bubble Formation in Amorphous SiOC/Crystalline Fe Nanocomposite.

Su Q, Wang T, Gigax J, Shao L, Nastasi M. Su Q, et al. Among authors: nastasi m. Materials (Basel). 2018 Dec 28;12(1):93. doi: 10.3390/ma12010093. Materials (Basel). 2018. PMID: 30597850 Free PMC article.

5

A transmission electron microscopy study of the effect of interfaces on bubble formation in He-implanted Cu-Nb multilayers.

Bhattacharyya D, Demkowicz MJ, Wang YQ, Baumer RE, Nastasi M, Misra A. Bhattacharyya D, et al. Among authors: nastasi m. Microsc Microanal. 2012 Feb;18(1):152-61. doi: 10.1017/S1431927611012219. Microsc Microanal. 2012. PMID: 22258724

6

Are nanoporous materials radiation resistant?

Bringa EM, Monk JD, Caro A, Misra A, Zepeda-Ruiz L, Duchaineau M, Abraham F, Nastasi M, Picraux ST, Wang YQ, Farkas D. Bringa EM, et al. Among authors: nastasi m. Nano Lett. 2012 Jul 11;12(7):3351-5. doi: 10.1021/nl201383u. Epub 2011 Jun 9. Nano Lett. 2012. PMID: 21651306

7

Efficient annealing of radiation damage near grain boundaries via interstitial emission.

Bai XM, Voter AF, Hoagland RG, Nastasi M, Uberuaga BP. Bai XM, et al. Among authors: nastasi m. Science. 2010 Mar 26;327(5973):1631-4. doi: 10.1126/science.1183723. Science. 2010. PMID: 20339070

8

Turning an organic semiconductor into a low-resistance material by ion implantation.

Fraboni B, Scidà A, Cosseddu P, Wang Y, Nastasi M, Milita S, Bonfiglio A. Fraboni B, et al. Among authors: nastasi m. Sci Technol Adv Mater. 2015 Dec 18;16(6):065008. doi: 10.1088/1468-6996/16/6/065008. eCollection 2015 Dec. Sci Technol Adv Mater. 2015. PMID: 27877850 Free PMC article.

9

Chemical solution deposition of epitaxial carbide films.

Zou G, Wang H, Mara N, Luo H, Li N, Di Z, Bauer E, Wang Y, McCleskey T, Burrell A, Zhang X, Nastasi M, Jia Q. Zou G, et al. Among authors: nastasi m. J Am Chem Soc. 2010 Mar 3;132(8):2516-7. doi: 10.1021/ja9102315. J Am Chem Soc. 2010. PMID: 20136140

10

Molecular dynamics simulation of brittle fracture in silicon.

Swadener JG, Baskes MI, Nastasi M. Swadener JG, et al. Among authors: nastasi m. Phys Rev Lett. 2002 Aug 19;89(8):085503. doi: 10.1103/PhysRevLett.89.085503. Epub 2002 Aug 6. Phys Rev Lett. 2002. PMID: 12190480

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