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Optically Addressable Silicon Vacancy-Related Spin Centers in Rhombic Silicon Carbide with High Breakdown Characteristics and ENDOR Evidence of Their Structure.
Soltamov VA, Yavkin BV, Tolmachev DO, Babunts RA, Badalyan AG, Davydov VY, Mokhov EN, Proskuryakov II, Orlinskii SB, Baranov PG. Soltamov VA, et al. Among authors: mokhov en. Phys Rev Lett. 2015 Dec 11;115(24):247602. doi: 10.1103/PhysRevLett.115.247602. Epub 2015 Dec 11. Phys Rev Lett. 2015. PMID: 26705655
Identification of molybdenum in 6H-SiC by magnetic resonance techniques.
Dombrowski KF, Kunzer M, Kaufmann U, Schneider J, Baranov PG, Mokhov EN. Dombrowski KF, et al. Among authors: mokhov en. Phys Rev B Condens Matter. 1996 Sep 1;54(10):7323-7327. doi: 10.1103/physrevb.54.7323. Phys Rev B Condens Matter. 1996. PMID: 9984354 No abstract available.
Identification of the 1.19-eV luminescence in hexagonal GaN.
Heitz R, Thurian P, Loa I I, Eckey L, Hoffmann A, Broser I I, Pressel K, Meyer BK, Mokhov EN. Heitz R, et al. Among authors: mokhov en. Phys Rev B Condens Matter. 1995 Dec 15;52(23):16508-16515. doi: 10.1103/physrevb.52.16508. Phys Rev B Condens Matter. 1995. PMID: 9981050 No abstract available.