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Year | Number of Results |
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2021 | 2 |
2022 | 1 |
2024 | 0 |
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High-Frequency and High-Power Performance of n-Type GaN Epilayers with Low Electron Density Grown on Native Substrate.
Materials (Basel). 2022 Mar 11;15(6):2066. doi: 10.3390/ma15062066.
Materials (Basel). 2022.
PMID: 35329518
Free PMC article.
Role of Metal Vacancies in the Mechanism of Thermal Degradation of InGaN Quantum Wells.
Smalc-Koziorowska J, Grzanka E, Lachowski A, Hrytsak R, Grabowski M, Grzanka S, Kret S, Czernecki R, Turski H, Marona L, Markurt T, Schulz T, Albrecht M, Leszczynski M.
Smalc-Koziorowska J, et al. Among authors: grabowski m.
ACS Appl Mater Interfaces. 2021 Feb 17;13(6):7476-7484. doi: 10.1021/acsami.0c21293. Epub 2021 Feb 2.
ACS Appl Mater Interfaces. 2021.
PMID: 33529520
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The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs.
Grabowski M, Grzanka E, Grzanka S, Lachowski A, Smalc-Koziorowska J, Czernecki R, Hrytsak R, Moneta J, Gawlik G, Turos A, Leszczyński M.
Grabowski M, et al.
Sci Rep. 2021 Jan 28;11(1):2458. doi: 10.1038/s41598-021-81017-w.
Sci Rep. 2021.
PMID: 33510188
Free PMC article.
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