Mehonic A - Search Results

1

Thin-film design of amorphous hafnium oxide nanocomposites enabling strong interfacial resistive switching uniformity.

Hellenbrand M, Bakhit B, Dou H, Xiao M, Hill MO, Sun Z, Mehonic A, Chen A, Jia Q, Wang H, MacManus-Driscoll JL. Hellenbrand M, et al. Among authors: mehonic a. Sci Adv. 2023 Jun 23;9(25):eadg1946. doi: 10.1126/sciadv.adg1946. Epub 2023 Jun 21. Sci Adv. 2023. PMID: 37343094 Free PMC article.

2

Intrinsic Resistance Switching in Amorphous Silicon Suboxides: The Role of Columnar Microstructure.

Munde MS, Mehonic A, Ng WH, Buckwell M, Montesi L, Bosman M, Shluger AL, Kenyon AJ. Munde MS, et al. Among authors: mehonic a. Sci Rep. 2017 Aug 24;7(1):9274. doi: 10.1038/s41598-017-09565-8. Sci Rep. 2017. PMID: 28839255 Free PMC article.

3

The interplay between structure and function in redox-based resistance switching.

Kenyon AJ, Singh Munde M, Ng WH, Buckwell M, Joksas D, Mehonic A. Kenyon AJ, et al. Among authors: mehonic a. Faraday Discuss. 2019 Feb 18;213(0):151-163. doi: 10.1039/c8fd00118a. Faraday Discuss. 2019. PMID: 30371722

4

Standards for the Characterization of Endurance in Resistive Switching Devices.

Lanza M, Waser R, Ielmini D, Yang JJ, Goux L, Suñe J, Kenyon AJ, Mehonic A, Spiga S, Rana V, Wiefels S, Menzel S, Valov I, Villena MA, Miranda E, Jing X, Campabadal F, Gonzalez MB, Aguirre F, Palumbo F, Zhu K, Roldan JB, Puglisi FM, Larcher L, Hou TH, Prodromakis T, Yang Y, Huang P, Wan T, Chai Y, Pey KL, Raghavan N, Dueñas S, Wang T, Xia Q, Pazos S. Lanza M, et al. Among authors: mehonic a. ACS Nano. 2021 Nov 23;15(11):17214-17231. doi: 10.1021/acsnano.1c06980. Epub 2021 Nov 3. ACS Nano. 2021. PMID: 34730935 Free article. Review.

5

Quantum conductance in silicon oxide resistive memory devices.

Mehonic A, Vrajitoarea A, Cueff S, Hudziak S, Howe H, Labbé C, Rizk R, Pepper M, Kenyon AJ. Mehonic A, et al. Sci Rep. 2013;3:2708. doi: 10.1038/srep02708. Sci Rep. 2013. PMID: 24048282 Free PMC article.

6

Spike-Timing Dependent Plasticity in Unipolar Silicon Oxide RRAM Devices.

Zarudnyi K, Mehonic A, Montesi L, Buckwell M, Hudziak S, Kenyon AJ. Zarudnyi K, et al. Among authors: mehonic a. Front Neurosci. 2018 Feb 8;12:57. doi: 10.3389/fnins.2018.00057. eCollection 2018. Front Neurosci. 2018. PMID: 29472837 Free PMC article.

7

Electrically tailored resistance switching in silicon oxide.

Mehonic A, Cueff S, Wojdak M, Hudziak S, Labbé C, Rizk R, Kenyon AJ. Mehonic A, et al. Nanotechnology. 2012 Nov 16;23(45):455201. doi: 10.1088/0957-4484/23/45/455201. Epub 2012 Oct 12. Nanotechnology. 2012. PMID: 23064085

8

Emulating the Electrical Activity of the Neuron Using a Silicon Oxide RRAM Cell.

Mehonic A, Kenyon AJ. Mehonic A, et al. Front Neurosci. 2016 Feb 23;10:57. doi: 10.3389/fnins.2016.00057. eCollection 2016. Front Neurosci. 2016. PMID: 26941598 Free PMC article.

9

Nonideality-Aware Training for Accurate and Robust Low-Power Memristive Neural Networks.

Joksas D, Wang E, Barmpatsalos N, Ng WH, Kenyon AJ, Constantinides GA, Mehonic A. Joksas D, et al. Among authors: mehonic a. Adv Sci (Weinh). 2022 Jun;9(17):e2105784. doi: 10.1002/advs.202105784. Epub 2022 May 4. Adv Sci (Weinh). 2022. PMID: 35508766 Free PMC article.

10

Silicon Oxide (SiO_x ): A Promising Material for Resistance Switching?

Mehonic A, Shluger AL, Gao D, Valov I, Miranda E, Ielmini D, Bricalli A, Ambrosi E, Li C, Yang JJ, Xia Q, Kenyon AJ. Mehonic A, et al. Adv Mater. 2018 Oct;30(43):e1801187. doi: 10.1002/adma.201801187. Epub 2018 Jun 29. Adv Mater. 2018. PMID: 29957849 Review.

Save citations to file

Email citations

Send citations to clipboard

Add to Collections

Add to My Bibliography

Create a file for external citation management software

Your saved search

Your RSS Feed

My NCBI Filters

Text availability

Article attribute

Article type

Publication date

22 results

Search Page