McIntyre PC - Search Results

1

Dynamic thermal emission control with InAs-based plasmonic metasurfaces.

Park J, Kang JH, Liu X, Maddox SJ, Tang K, McIntyre PC, Bank SR, Brongersma ML. Park J, et al. Among authors: mcintyre pc. Sci Adv. 2018 Dec 7;4(12):eaat3163. doi: 10.1126/sciadv.aat3163. eCollection 2018 Dec. Sci Adv. 2018. PMID: 30539139 Free PMC article.

2

Thermal stability and surface passivation of Ge nanowires coated by epitaxial SiGe shells.

Hu S, Kawamura Y, Huang KC, Li Y, Marshall AF, Itoh KM, Brongersma ML, McIntyre PC. Hu S, et al. Among authors: mcintyre pc. Nano Lett. 2012 Mar 14;12(3):1385-91. doi: 10.1021/nl204053w. Epub 2012 Feb 24. Nano Lett. 2012. PMID: 22364183

3

Ultrafast electron and phonon response of oriented and diameter-controlled germanium nanowire arrays.

Li Y, Clady R, Park J, Thombare SV, Schmidt TW, Brongersma ML, McIntyre PC. Li Y, et al. Among authors: mcintyre pc. Nano Lett. 2014 Jun 11;14(6):3427-31. doi: 10.1021/nl500953p. Epub 2014 May 19. Nano Lett. 2014. PMID: 24797453

4

Selective Passivation of GeO2/Ge Interface Defects in Atomic Layer Deposited High-k MOS Structures.

Zhang L, Li H, Guo Y, Tang K, Woicik J, Robertson J, McIntyre PC. Zhang L, et al. Among authors: mcintyre pc. ACS Appl Mater Interfaces. 2015 Sep 23;7(37):20499-506. doi: 10.1021/acsami.5b06087. Epub 2015 Sep 9. ACS Appl Mater Interfaces. 2015. PMID: 26334784

5

The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces.

Kent T, Tang K, Chobpattana V, Negara MA, Edmonds M, Mitchell W, Sahu B, Galatage R, Droopad R, McIntyre P, Kummel AC. Kent T, et al. J Chem Phys. 2015 Oct 28;143(16):164711. doi: 10.1063/1.4934656. J Chem Phys. 2015. PMID: 26520547

6

From Twinning to Pure Zincblende Catalyst-Free InAs(Sb) Nanowires.

Potts H, Friedl M, Amaduzzi F, Tang K, Tütüncüoglu G, Matteini F, Alarcon Lladó E, McIntyre PC, Fontcuberta i Morral A. Potts H, et al. Among authors: mcintyre pc. Nano Lett. 2016 Jan 13;16(1):637-43. doi: 10.1021/acs.nanolett.5b04367. Epub 2015 Dec 22. Nano Lett. 2016. PMID: 26686394 Free article.

7

Titanium Oxide Crystallization and Interface Defect Passivation for High Performance Insulator-Protected Schottky Junction MIS Photoanodes.

Scheuermann AG, Lawrence JP, Meng AC, Tang K, Hendricks OL, Chidsey CE, McIntyre PC. Scheuermann AG, et al. Among authors: mcintyre pc. ACS Appl Mater Interfaces. 2016 Jun 15;8(23):14596-603. doi: 10.1021/acsami.6b03688. Epub 2016 May 31. ACS Appl Mater Interfaces. 2016. PMID: 27196628

8

Effects of Titanium Layer Oxygen Scavenging on the High-k/InGaAs Interface.

Winter R, Shekhter P, Tang K, Floreano L, Verdini A, McIntyre PC, Eizenberg M. Winter R, et al. Among authors: mcintyre pc. ACS Appl Mater Interfaces. 2016 Jul 6;8(26):16979-84. doi: 10.1021/acsami.6b02957. Epub 2016 Jun 23. ACS Appl Mater Interfaces. 2016. PMID: 27282201

9

Interface Engineering for Atomic Layer Deposited Alumina Gate Dielectric on SiGe Substrates.

Zhang L, Guo Y, Hassan VV, Tang K, Foad MA, Woicik JC, Pianetta P, Robertson J, McIntyre PC. Zhang L, et al. Among authors: mcintyre pc. ACS Appl Mater Interfaces. 2016 Jul 27;8(29):19110-8. doi: 10.1021/acsami.6b03331. Epub 2016 Jul 12. ACS Appl Mater Interfaces. 2016. PMID: 27345195

10

Temperature Dependent Border Trap Response Produced by a Defective Interfacial Oxide Layer in Al₂O₃/InGaAs Gate Stacks.

Tang K, Meng AC, Droopad R, McIntyre PC. Tang K, et al. Among authors: mcintyre pc. ACS Appl Mater Interfaces. 2016 Nov 9;8(44):30601-30607. doi: 10.1021/acsami.6b10402. Epub 2016 Oct 31. ACS Appl Mater Interfaces. 2016. PMID: 27758108

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