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Ultrafast properties of femtosecond-laser-ablated GaAs and its application to terahertz optoelectronics.
Opt Lett. 2015 Jul 15;40(14):3388-91. doi: 10.1364/OL.40.003388.
Opt Lett. 2015.
PMID: 26176476
Imaging the motion of electrons across semiconductor heterojunctions.
Man MK, Margiolakis A, Deckoff-Jones S, Harada T, Wong EL, Krishna MB, Madéo J, Winchester A, Lei S, Vajtai R, Ajayan PM, Dani KM.
Man MK, et al. Among authors: margiolakis a.
Nat Nanotechnol. 2017 Jan;12(1):36-40. doi: 10.1038/nnano.2016.183. Epub 2016 Oct 10.
Nat Nanotechnol. 2017.
PMID: 27723731
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Obtaining Cross-Sections of Paint Layers in Cultural Artifacts Using Femtosecond Pulsed Lasers.
Harada T, Spence S, Margiolakis A, Deckoff-Jones S, Ploeger R, Shugar AN, Hamm JF, Dani KM, Dani AR.
Harada T, et al. Among authors: margiolakis a.
Materials (Basel). 2017 Jan 26;10(2):107. doi: 10.3390/ma10020107.
Materials (Basel). 2017.
PMID: 28772468
Free PMC article.
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