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Type-II GaSb quantum dots grown on InAlAs/InP (001) by droplet epitaxy.
Nanotechnology. 2020 Jul 31;31(31):315701. doi: 10.1088/1361-6528/ab8a8e. Epub 2020 Apr 17.
Nanotechnology. 2020.
PMID: 32303015
Photoluminescence Study of the Interface Fluctuation Effect for InGaAs/InAlAs/InP Single Quantum Well with Different Thickness.
Wang Y, Sheng X, Guo Q, Li X, Wang S, Fu G, Mazur YI, Maidaniuk Y, Ware ME, Salamo GJ, Liang B, Huffaker DL.
Wang Y, et al. Among authors: maidaniuk y.
Nanoscale Res Lett. 2017 Dec;12(1):229. doi: 10.1186/s11671-017-1998-8. Epub 2017 Mar 29.
Nanoscale Res Lett. 2017.
PMID: 28359139
Free PMC article.
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