Mahata C - Search Results

1

Memristive and Synaptic Characteristics of Nitride-Based Heterostructures on Si Substrate.

Rahmani MK, Kim MH, Hussain F, Abbas Y, Ismail M, Hong K, Mahata C, Choi C, Park BG, Kim S. Rahmani MK, et al. Among authors: mahata c. Nanomaterials (Basel). 2020 May 22;10(5):994. doi: 10.3390/nano10050994. Nanomaterials (Basel). 2020. PMID: 32455892 Free PMC article.

2

Synaptic Characteristics of Amorphous Boron Nitride-Based Memristors on a Highly Doped Silicon Substrate for Neuromorphic Engineering.

Lee J, Ryu JH, Kim B, Hussain F, Mahata C, Sim E, Ismail M, Abbas Y, Abbas H, Lee DK, Kim MH, Kim Y, Choi C, Park BG, Kim S. Lee J, et al. Among authors: mahata c. ACS Appl Mater Interfaces. 2020 Jul 29;12(30):33908-33916. doi: 10.1021/acsami.0c07867. Epub 2020 Jul 15. ACS Appl Mater Interfaces. 2020. PMID: 32608233

3

Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO₂/Al₂O₃/HfO₂ Based Memristor on ITO Electrode.

Mahata C, Kang M, Kim S. Mahata C, et al. Nanomaterials (Basel). 2020 Oct 20;10(10):2069. doi: 10.3390/nano10102069. Nanomaterials (Basel). 2020. PMID: 33092042 Free PMC article.

4

ab initio study of oxygen vacancy effects on structural, electronic and thermoelectric behavior of AZr_1-xM_xO₃ (A = Ba, Ca, Sr; M= Al, Cu, x = 0.25) for application of memory devices.

Khera EA, Ullah H, Imran M, Niaz NA, Hussain F, Khalil RMA, Resheed U, Rana AM, Hussain MI, Mahata C, Kim S. Khera EA, et al. Among authors: mahata c. J Mol Graph Model. 2021 Mar;103:107825. doi: 10.1016/j.jmgm.2020.107825. Epub 2020 Dec 21. J Mol Graph Model. 2021. PMID: 33429230

5

Bipolar and Complementary Resistive Switching Characteristics and Neuromorphic System Simulation in a Pt/ZnO/TiN Synaptic Device.

Khan SA, Lee GH, Mahata C, Ismail M, Kim H, Kim S. Khan SA, et al. Among authors: mahata c. Nanomaterials (Basel). 2021 Jan 27;11(2):315. doi: 10.3390/nano11020315. Nanomaterials (Basel). 2021. PMID: 33513672 Free PMC article.

6

Tunable Synaptic Characteristics of a Ti/TiO₂/Si Memory Device for Reservoir Computing.

Yang J, Cho H, Ryu H, Ismail M, Mahata C, Kim S. Yang J, et al. Among authors: mahata c. ACS Appl Mater Interfaces. 2021 Jul 21;13(28):33244-33252. doi: 10.1021/acsami.1c06618. Epub 2021 Jul 12. ACS Appl Mater Interfaces. 2021. PMID: 34251796

7

Improved resistive switching characteristics of a multi-stacked HfO₂/Al₂O₃/HfO₂ RRAM structure for neuromorphic and synaptic applications: experimental and computational study.

Khera EA, Mahata C, Imran M, Niaz NA, Hussain F, Khalil RMA, Rasheed U, SungjunKim. Khera EA, et al. Among authors: mahata c. RSC Adv. 2022 Apr 14;12(19):11649-11656. doi: 10.1039/d1ra08103a. eCollection 2022 Apr 13. RSC Adv. 2022. PMID: 35432948 Free PMC article.

8

Synaptic Plasticity and Quantized Conductance States in TiN-Nanoparticles-Based Memristor for Neuromorphic System.

Mahata C, Ismail M, Kang M, Kim S. Mahata C, et al. Nanoscale Res Lett. 2022 Jun 10;17(1):58. doi: 10.1186/s11671-022-03696-2. Nanoscale Res Lett. 2022. PMID: 35687194 Free PMC article.

9

Robust Resistive Switching Constancy and Quantum Conductance in High-k Dielectric-Based Memristor for Neuromorphic Engineering.

Ismail M, Mahata C, Kang M, Kim S. Ismail M, et al. Among authors: mahata c. Nanoscale Res Lett. 2022 Jun 24;17(1):61. doi: 10.1186/s11671-022-03699-z. Nanoscale Res Lett. 2022. PMID: 35749003 Free PMC article.

10

Memristive Switching and Density-Functional Theory Calculations in Double Nitride Insulating Layers.

Khan SA, Hussain F, Chung D, Rahmani MK, Ismail M, Mahata C, Abbas Y, Abbas H, Choi C, Mikhaylov AN, Shchanikov SA, Yang BD, Kim S. Khan SA, et al. Among authors: mahata c. Micromachines (Basel). 2022 Sep 9;13(9):1498. doi: 10.3390/mi13091498. Micromachines (Basel). 2022. PMID: 36144121 Free PMC article.

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