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Carrier transport and emission efficiency in InGaN quantum-dot based light-emitting diodes.
Nanotechnology. 2017 Jul 7;28(27):275201. doi: 10.1088/1361-6528/aa75a8.
Nanotechnology. 2017.
PMID: 28612754
Influence of electromechanical coupling on optical properties of InGaN quantum-dot based light-emitting diodes.
Barettin D, Maur MA, Carlo AD, Pecchia A, Tsatsulnikov AF, Sakharov AV, Lundin WV, Nikolaev AE, Usov SO, Cherkashin N, Hÿtch MJ, Karpov SY.
Barettin D, et al. Among authors: lundin wv.
Nanotechnology. 2017 Jan 6;28(1):015701. doi: 10.1088/0957-4484/28/1/015701. Epub 2016 Nov 29.
Nanotechnology. 2017.
PMID: 27897139
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Scattering Analysis of AlGaN/AlN/GaN Heterostructures with Fe-Doped GaN Buffer.
Arteev DS, Sakharov AV, Lundin WV, Zavarin EE, Nikolaev AE, Tsatsulnikov AF, Ustinov VM.
Arteev DS, et al. Among authors: lundin wv.
Materials (Basel). 2022 Dec 14;15(24):8945. doi: 10.3390/ma15248945.
Materials (Basel). 2022.
PMID: 36556750
Free PMC article.
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AlGaN HEMT Structures Grown on Miscut Si(111) Wafers.
Sakharov AV, Arteev DS, Zavarin EE, Nikolaev AE, Lundin WV, Prasolov ND, Yagovkina MA, Tsatsulnikov AF, Fedotov SD, Sokolov EM, Statsenko VN.
Sakharov AV, et al. Among authors: lundin wv.
Materials (Basel). 2023 Jun 8;16(12):4265. doi: 10.3390/ma16124265.
Materials (Basel). 2023.
PMID: 37374449
Free PMC article.
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Mapping of Fabry-Perot and whispering gallery modes in GaN microwires by nonlinear imaging.
Berdnikov Y, Shtrom I, Rozhavskaya M, Lundin W, Hendricks N, Grange R, Timofeeva M.
Berdnikov Y, et al.
Nanotechnology. 2021 Jul 16;32(40). doi: 10.1088/1361-6528/ac1017.
Nanotechnology. 2021.
PMID: 34192677
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The Effect of Interface Diffusion on Raman Spectra of Wurtzite Short-Period GaN/AlN Superlattices.
Davydov V, Roginskii EM, Kitaev Y, Smirnov A, Eliseyev I, Zavarin E, Lundin W, Nechaev D, Jmerik V, Smirnov M, Pristovsek M, Shubina T.
Davydov V, et al.
Nanomaterials (Basel). 2021 Sep 14;11(9):2396. doi: 10.3390/nano11092396.
Nanomaterials (Basel). 2021.
PMID: 34578711
Free PMC article.
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