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Atomic Layer Deposition of Layered Boron Nitride for Large-Area 2D Electronics.
Lee J, Ravichandran AV, Mohan J, Cheng L, Lucero AT, Zhu H, Che Z, Catalano M, Kim MJ, Wallace RM, Venugopal A, Choi W, Colombo L, Kim J. Lee J, et al. Among authors: lucero at. ACS Appl Mater Interfaces. 2020 Aug 12;12(32):36688-36694. doi: 10.1021/acsami.0c07548. Epub 2020 Jul 29. ACS Appl Mater Interfaces. 2020. PMID: 32667778
Partially Fluorinated Graphene: Structural and Electrical Characterization.
Cheng L, Jandhyala S, Mordi G, Lucero AT, Huang J, Azcatl A, Addou R, Wallace RM, Colombo L, Kim J. Cheng L, et al. Among authors: lucero at. ACS Appl Mater Interfaces. 2016 Feb;8(7):5002-8. doi: 10.1021/acsami.5b11701. Epub 2016 Feb 10. ACS Appl Mater Interfaces. 2016. PMID: 26820099
Investigation of the Physical Properties of Plasma Enhanced Atomic Layer Deposited Silicon Nitride as Etch Stopper.
Kim HS, Meng X, Kim SJ, Lucero AT, Cheng L, Byun YC, Lee JS, Hwang SM, Kondusamy ALN, Wallace RM, Goodman G, Wan AS, Telgenhoff M, Hwang BK, Kim J. Kim HS, et al. Among authors: lucero at. ACS Appl Mater Interfaces. 2018 Dec 26;10(51):44825-44833. doi: 10.1021/acsami.8b15291. Epub 2018 Dec 11. ACS Appl Mater Interfaces. 2018. PMID: 30485061