Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors.
Fontserè A, Pérez-Tomás A, Placidi M, Llobet J, Baron N, Chenot S, Cordier Y, Moreno JC, Jennings MR, Gammon PM, Fisher CA, Iglesias V, Porti M, Bayerl A, Lanza M, Nafría M.
Fontserè A, et al. Among authors: llobet j.
Nanotechnology. 2012 Oct 5;23(39):395204. doi: 10.1088/0957-4484/23/39/395204. Epub 2012 Sep 12.
Nanotechnology. 2012.
PMID: 22971927