Liu X - Search Results

1

Investigation on Capacitance Collapse Induced by Secondary Capture of Acceptor Traps in AlGaN/GaN Lateral Schottky Barrier Diode.

Zhang H, Kang X, Zheng Y, Wei K, Wu H, Liu X, Ye T, Jin Z. Zhang H, et al. Among authors: liu x. Micromachines (Basel). 2022 May 9;13(5):748. doi: 10.3390/mi13050748. Micromachines (Basel). 2022. PMID: 35630215 Free PMC article.

2

The anistropy of field effect mobility of CVD graphene grown on copper foil.

Zhang D, Jin Z, Shi J, Ma P, Peng S, Liu X, Ye T. Zhang D, et al. Among authors: liu x. Small. 2014 May 14;10(9):1761-4. doi: 10.1002/smll.201303195. Epub 2014 Feb 14. Small. 2014. PMID: 24532347 No abstract available.

3

Edge morphology evolution of graphene domains during chemical vapor deposition cooling revealed through hydrogen etching.

Zhang H, Zhang Y, Zhang Y, Chen Z, Sui Y, Ge X, Yu G, Jin Z, Liu X. Zhang H, et al. Among authors: liu x. Nanoscale. 2016 Feb 21;8(7):4145-50. doi: 10.1039/c5nr06624g. Nanoscale. 2016. PMID: 26866950

4

Realizing controllable graphene nucleation by regulating the competition of hydrogen and oxygen during chemical vapor deposition heating.

Zhang H, Zhang Y, Zhang Y, Chen Z, Sui Y, Ge X, Deng R, Yu G, Jin Z, Liu X. Zhang H, et al. Among authors: liu x. Phys Chem Chem Phys. 2016 Aug 24;18(34):23638-42. doi: 10.1039/c6cp03102a. Phys Chem Chem Phys. 2016. PMID: 27506467

5

Effects of carbon-based impurities on graphene growth.

Ge X , Zhang Y , Chen Z , Liang Y , Hu S , Sui Y , Yu G , Peng S , Jin Z , Liu X . Ge X , et al. Among authors: liu x. Phys Chem Chem Phys. 2018 Jun 6;20(22):15419-15423. doi: 10.1039/c8cp00944a. Phys Chem Chem Phys. 2018. PMID: 29799039

6

Insight into the Near-Conduction Band States at the Crystallized Interface between GaN and SiN _x Grown by Low-Pressure Chemical Vapor Deposition.

Liu X, Wang X, Zhang Y, Wei K, Zheng Y, Kang X, Jiang H, Li J, Wang W, Wu X, Wang X, Huang S. Liu X, et al. ACS Appl Mater Interfaces. 2018 Jun 27;10(25):21721-21729. doi: 10.1021/acsami.8b04694. Epub 2018 Jun 12. ACS Appl Mater Interfaces. 2018. PMID: 29863840

7

Optimization of Mesa Etch for a Quasi-Vertical GaN Schottky Barrier Diode (SBD) by Inductively Coupled Plasma (ICP) and Device Characteristics.

Sun Y, Kang X, Zheng Y, Wei K, Li P, Wang W, Liu X, Zhang G. Sun Y, et al. Among authors: liu x. Nanomaterials (Basel). 2020 Apr 1;10(4):657. doi: 10.3390/nano10040657. Nanomaterials (Basel). 2020. PMID: 32244713 Free PMC article.

8

Partially Crystallized Ultrathin Interfaces between GaN and SiN_x Grown by Low-Pressure Chemical Vapor Deposition and Interface Editing.

Wang X, Zhang Y, Huang S, Yin H, Fan J, Wei K, Zheng Y, Wang W, Jiang H, Wu X, Wang X, Liu C, Liu X. Wang X, et al. Among authors: liu x, liu c. ACS Appl Mater Interfaces. 2021 Feb 17;13(6):7725-7734. doi: 10.1021/acsami.0c19483. Epub 2021 Feb 2. ACS Appl Mater Interfaces. 2021. PMID: 33529524

9

Single-Crystal MoS₂ Monolayer Wafer Grown on Au (111) Film Substrates.

Li J, Wang S, Jiang Q, Qian H, Hu S, Kang H, Chen C, Zhan X, Yu A, Zhao S, Zhang Y, Chen Z, Sui Y, Qiao S, Yu G, Peng S, Jin Z, Liu X. Li J, et al. Among authors: liu x. Small. 2021 Jul;17(30):e2100743. doi: 10.1002/smll.202100743. Epub 2021 Jun 18. Small. 2021. PMID: 34145739

10

Investigation on Dynamic Characteristics of AlGaN/GaN Lateral Schottky Barrier Diode.

Zhang H, Kang X, Zheng Y, Wu H, Wei K, Liu X, Ye T, Jin Z. Zhang H, et al. Among authors: liu x. Micromachines (Basel). 2021 Oct 22;12(11):1296. doi: 10.3390/mi12111296. Micromachines (Basel). 2021. PMID: 34832708 Free PMC article.

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