Liu S - Search Results

1

Schottky barrier heights in two-dimensional field-effect transistors: from theory to experiment.

Wang Y, Liu S, Li Q, Quhe R, Yang C, Guo Y, Zhang X, Pan Y, Li J, Zhang H, Xu L, Shi B, Tang H, Li Y, Yang J, Zhang Z, Xiao L, Pan F, Lu J. Wang Y, et al. Among authors: liu s. Rep Prog Phys. 2021 Apr 27;84(5). doi: 10.1088/1361-6633/abf1d4. Rep Prog Phys. 2021. PMID: 33761489 Review.

2

Sub-5 nm Monolayer Arsenene and Antimonene Transistors.

Sun X, Song Z, Liu S, Wang Y, Li Y, Wang W, Lu J. Sun X, et al. Among authors: liu s. ACS Appl Mater Interfaces. 2018 Jul 5;10(26):22363-22371. doi: 10.1021/acsami.8b03840. Epub 2018 Jun 19. ACS Appl Mater Interfaces. 2018. PMID: 29877077

3

n-Type Ohmic contact and p-type Schottky contact of monolayer InSe transistors.

Shi B , Wang Y , Li J , Zhang X , Yan J , Liu S , Yang J , Pan Y , Zhang H , Yang J , Pan F , Lu J . Shi B , et al. Among authors: liu s. Phys Chem Chem Phys. 2018 Oct 3;20(38):24641-24651. doi: 10.1039/c8cp04615h. Phys Chem Chem Phys. 2018. PMID: 30238940

4

First-principles simulation of monolayer hydrogen passivated Bi₂O₂S₂-metal interfaces.

Xu L, Liu S, Zhang H, Zhang X, Li J, Yan J, Shi B, Yang J, Yang C, Xu L, Sun X, Lu J. Xu L, et al. Among authors: liu s. Phys Chem Chem Phys. 2020 Apr 15;22(15):7853-7863. doi: 10.1039/d0cp00058b. Phys Chem Chem Phys. 2020. PMID: 32227028

5

Performance Limit of Monolayer WSe₂ Transistors; Significantly Outperform Their MoS₂ Counterpart.

Sun X, Xu L, Zhang Y, Wang W, Liu S, Yang C, Zhang Z, Lu J. Sun X, et al. Among authors: liu s. ACS Appl Mater Interfaces. 2020 May 6;12(18):20633-20644. doi: 10.1021/acsami.0c01750. Epub 2020 Apr 21. ACS Appl Mater Interfaces. 2020. PMID: 32285659

6

Gate-tunable high magnetoresistance in monolayer Fe₃GeTe₂ spin valves.

Yang J , Quhe R , Liu S , Peng Y , Sun X , Zha L , Wu B , Shi B , Yang C , Shi J , Tian G , Wang C , Lu J , Yang J . Yang J , et al. Among authors: liu s. Phys Chem Chem Phys. 2020 Nov 18;22(44):25730-25739. doi: 10.1039/d0cp03761c. Phys Chem Chem Phys. 2020. PMID: 33146647

7

Can ultra-thin Si FinFETs work well in the sub-10 nm gate-length region?

Liu S, Yang J, Xu L, Li J, Yang C, Li Y, Shi B, Pan Y, Xu L, Ma J, Yang J, Lu J. Liu S, et al. Nanoscale. 2021 Mar 18;13(10):5536-5544. doi: 10.1039/d0nr09094h. Nanoscale. 2021. PMID: 33688887

8

Can Carbon Nanotube Transistors Be Scaled Down to the Sub-5 nm Gate Length?

Xu L, Yang J, Qiu C, Liu S, Zhou W, Li Q, Shi B, Ma J, Yang C, Lu J, Zhang Z. Xu L, et al. Among authors: liu s. ACS Appl Mater Interfaces. 2021 Jul 14;13(27):31957-31967. doi: 10.1021/acsami.1c05229. Epub 2021 Jul 2. ACS Appl Mater Interfaces. 2021. PMID: 34210135

9

Improvement of alkali metal ion batteries via interlayer engineering of anodes: from graphite to graphene.

Ma J , Yang C , Ma X , Liu S , Yang J , Xu L , Gao J , Quhe R , Sun X , Yang J , Pan F , Yang X , Lu J . Ma J , et al. Among authors: liu s. Nanoscale. 2021 Aug 7;13(29):12521-12533. doi: 10.1039/d1nr01946e. Epub 2021 Jul 15. Nanoscale. 2021. PMID: 34263895

10

Phase transition and topological transistors based on monolayer Na₃Bi nanoribbons.

Shi B, Tang H, Song Z, Li J, Xu L, Liu S, Yang J, Sun X, Quhe R, Yang J, Lu J. Shi B, et al. Among authors: liu s. Nanoscale. 2021 Sep 17;13(35):15048-15057. doi: 10.1039/d1nr02221k. Nanoscale. 2021. PMID: 34533149

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