Gate-Controlled Metal-Insulator Transition in TiS3 Nanowire Field-Effect Transistors.
Randle M, Lipatov A, Kumar A, Kwan CP, Nathawat J, Barut B, Yin S, He K, Arabchigavkani N, Dixit R, Komesu T, Avila J, Asensio MC, Dowben PA, Sinitskii A, Singisetti U, Bird JP.
Randle M, et al. Among authors: lipatov a.
ACS Nano. 2019 Jan 22;13(1):803-811. doi: 10.1021/acsnano.8b08260. Epub 2018 Dec 28.
ACS Nano. 2019.
PMID: 30586504