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High-performance sub-10 nm monolayer Bi2O2Se transistors.
Quhe R , Liu J , Wu J , Yang J , Wang Y , Li Q , Li T , Guo Y , Yang J , Peng H , Lei M , Lu J . Quhe R , et al. Among authors: li t, li q. Nanoscale. 2019 Jan 3;11(2):532-540. doi: 10.1039/c8nr08852g. Nanoscale. 2019. PMID: 30543242
Performance Limit of Ultrathin GaAs Transistors.
Li Q, Fang S, Liu S, Xu L, Xu L, Yang C, Yang J, Shi B, Ma J, Yang J, Quhe R, Lu J. Li Q, et al. ACS Appl Mater Interfaces. 2022 May 16. doi: 10.1021/acsami.2c01134. Online ahead of print. ACS Appl Mater Interfaces. 2022. PMID: 35575689
2D fin field-effect transistors.
Quhe R, Li Q, Yang X, Lu J. Quhe R, et al. Among authors: li q. Sci Bull (Beijing). 2023 Jun 30;68(12):1213-1215. doi: 10.1016/j.scib.2023.05.019. Epub 2023 May 22. Sci Bull (Beijing). 2023. PMID: 37246034 No abstract available.
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