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Role of Metal Vacancies in the Mechanism of Thermal Degradation of InGaN Quantum Wells.
Smalc-Koziorowska J, Grzanka E, Lachowski A, Hrytsak R, Grabowski M, Grzanka S, Kret S, Czernecki R, Turski H, Marona L, Markurt T, Schulz T, Albrecht M, Leszczynski M. Smalc-Koziorowska J, et al. Among authors: leszczynski m. ACS Appl Mater Interfaces. 2021 Feb 17;13(6):7476-7484. doi: 10.1021/acsami.0c21293. Epub 2021 Feb 2. ACS Appl Mater Interfaces. 2021. PMID: 33529520
Indium Incorporation into InGaN Quantum Wells Grown on GaN Narrow Stripes.
Sarzyński M, Grzanka E, Grzanka S, Targowski G, Czernecki R, Reszka A, Holy V, Nitta S, Liu Z, Amano H, Leszczyński M. Sarzyński M, et al. Among authors: leszczynski m. Materials (Basel). 2019 Aug 14;12(16):2583. doi: 10.3390/ma12162583. Materials (Basel). 2019. PMID: 31416124 Free PMC article.
Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition.
Schilirò E, Giannazzo F, Di Franco S, Greco G, Fiorenza P, Roccaforte F, Prystawko P, Kruszewski P, Leszczynski M, Cora I, Pécz B, Fogarassy Z, Lo Nigro R. Schilirò E, et al. Among authors: leszczynski m. Nanomaterials (Basel). 2021 Dec 7;11(12):3316. doi: 10.3390/nano11123316. Nanomaterials (Basel). 2021. PMID: 34947665 Free PMC article.
Towards the identification of the dominant donor in GaN.
Perlin P, Suski T, Teisseyre H, Leszczynski M, Grzegory I I, Jun J, Porowski S, Boguslawski P, Bernholc J, Chervin JC, Polian A, Moustakas TD. Perlin P, et al. Among authors: leszczynski m. Phys Rev Lett. 1995 Jul 10;75(2):296-299. doi: 10.1103/PhysRevLett.75.296. Phys Rev Lett. 1995. PMID: 10059658 No abstract available.
61 results