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Sr1/2Ce5/14□1/7WO4: a new modulated ternary scheelite compound.
Damascena Dos Passos RH, Arab M, Pereira de Souza C, Leroux C. Damascena Dos Passos RH, et al. Among authors: leroux c. Acta Crystallogr B Struct Sci Cryst Eng Mater. 2017 Jun 1;73(Pt 3):466-473. doi: 10.1107/S2052520617002827. Epub 2017 Jun 1. Acta Crystallogr B Struct Sci Cryst Eng Mater. 2017. PMID: 28572556
Vapor liquid solid-hydride vapor phase epitaxy (VLS-HVPE) growth of ultra-long defect-free GaAs nanowires: ab initio simulations supporting center nucleation.
André Y, Lekhal K, Hoggan P, Avit G, Cadiz F, Rowe A, Paget D, Petit E, Leroux C, Trassoudaine A, Ramdani MR, Monier G, Colas D, Ajib R, Castelluci D, Gil E. André Y, et al. Among authors: leroux c. J Chem Phys. 2014 May 21;140(19):194706. doi: 10.1063/1.4874875. J Chem Phys. 2014. PMID: 24852556
Self-catalyzed GaAs nanowires on silicon by hydride vapor phase epitaxy.
Dong Z, André Y, Dubrovskii VG, Bougerol C, Leroux C, Ramdani MR, Monier G, Trassoudaine A, Castelluci D, Gil E. Dong Z, et al. Among authors: leroux c. Nanotechnology. 2017 Mar 24;28(12):125602. doi: 10.1088/1361-6528/aa5c6b. Epub 2017 Jan 31. Nanotechnology. 2017. PMID: 28140362
Record pure zincblende phase in GaAs nanowires down to 5 nm in radius.
Gil E, Dubrovskii VG, Avit G, André Y, Leroux C, Lekhal K, Grecenkov J, Trassoudaine A, Castelluci D, Monier G, Ramdani RM, Robert-Goumet C, Bideux L, Harmand JC, Glas F. Gil E, et al. Among authors: leroux c. Nano Lett. 2014 Jul 9;14(7):3938-44. doi: 10.1021/nl501239h. Epub 2014 Jun 3. Nano Lett. 2014. PMID: 24873917
Si Doping of Vapor-Liquid-Solid GaAs Nanowires: n-Type or p-Type?
Hijazi H, Monier G, Gil E, Trassoudaine A, Bougerol C, Leroux C, Castellucci D, Robert-Goumet C, Hoggan PE, André Y, Isik Goktas N, LaPierre RR, Dubrovskii VG. Hijazi H, et al. Among authors: leroux c. Nano Lett. 2019 Jul 10;19(7):4498-4504. doi: 10.1021/acs.nanolett.9b01308. Epub 2019 Jun 20. Nano Lett. 2019. PMID: 31203632
252 results