High-performance and low-power source-gated transistors enabled by a solution-processed metal oxide homojunction.
Zhuang X, Kim JS, Huang W, Chen Y, Wang G, Chen J, Yao Y, Wang Z, Liu F, Yu J, Cheng Y, Yang Z, Lauhon LJ, Marks TJ, Facchetti A.
Zhuang X, et al. Among authors: lauhon lj.
Proc Natl Acad Sci U S A. 2023 Jan 17;120(3):e2216672120. doi: 10.1073/pnas.2216672120. Epub 2023 Jan 11.
Proc Natl Acad Sci U S A. 2023.
PMID: 36630451
Free PMC article.