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High-Mobility Helical Tellurium Field-Effect Transistors Enabled by Transfer-Free, Low-Temperature Direct Growth.
Adv Mater. 2018 Jul 18:e1803109. doi: 10.1002/adma.201803109. Online ahead of print.
Adv Mater. 2018.
PMID: 30022534
Transition-metal nitride halide dielectrics for transition-metal dichalcogenide transistors.
Rostami Osanloo M, Saadat A, Van de Put ML, Laturia A, Vandenberghe WG.
Rostami Osanloo M, et al. Among authors: laturia a.
Nanoscale. 2021 Dec 23;14(1):157-165. doi: 10.1039/d1nr05250k.
Nanoscale. 2021.
PMID: 34904618
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