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Sensing behavior of atomically thin-layered MoS2 transistors.
Late DJ, Huang YK, Liu B, Acharya J, Shirodkar SN, Luo J, Yan A, Charles D, Waghmare UV, Dravid VP, Rao CN. Late DJ, et al. ACS Nano. 2013 Jun 25;7(6):4879-91. doi: 10.1021/nn400026u. Epub 2013 Jun 3. ACS Nano. 2013. PMID: 23713986
MoS2 and WS2 analogues of graphene.
Matte HS, Gomathi A, Manna AK, Late DJ, Datta R, Pati SK, Rao CN. Matte HS, et al. Among authors: late dj. Angew Chem Int Ed Engl. 2010 Jun 1;49(24):4059-62. doi: 10.1002/anie.201000009. Angew Chem Int Ed Engl. 2010. PMID: 20425874 No abstract available.
GaS and GaSe ultrathin layer transistors.
Late DJ, Liu B, Luo J, Yan A, Matte HS, Grayson M, Rao CN, Dravid VP. Late DJ, et al. Adv Mater. 2012 Jul 10;24(26):3549-54. doi: 10.1002/adma.201201361. Epub 2012 Jun 8. Adv Mater. 2012. PMID: 22678832
A semiconducting organic radical cationic host-guest complex.
Fahrenbach AC, Sampath S, Late DJ, Barnes JC, Kleinman SL, Valley N, Hartlieb KJ, Liu Z, Dravid VP, Schatz GC, Van Duyne RP, Stoddart JF. Fahrenbach AC, et al. Among authors: late dj. ACS Nano. 2012 Nov 27;6(11):9964-71. doi: 10.1021/nn303553z. Epub 2012 Oct 18. ACS Nano. 2012. PMID: 23078281
Enhanced field-emission behavior of layered MoS₂ sheets.
Kashid RV, Late DJ, Chou SS, Huang YK, De M, Joag DS, More MA, Dravid VP. Kashid RV, et al. Among authors: late dj. Small. 2013 Aug 26;9(16):2730-4. doi: 10.1002/smll.201300002. Epub 2013 Feb 21. Small. 2013. PMID: 23427106
A study of the synthetic methods and properties of graphenes.
Rao CN, Subrahmanyam KS, Ramakrishna Matte HS, Abdulhakeem B, Govindaraj A, Das B, Kumar P, Ghosh A, Late DJ. Rao CN, et al. Among authors: late dj. Sci Technol Adv Mater. 2010 Oct 27;11(5):054502. doi: 10.1088/1468-6996/11/5/054502. eCollection 2010 Oct. Sci Technol Adv Mater. 2010. PMID: 27877359 Free PMC article. Review.
45 results