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Auger-decay dynamics of germanium nano-islands in silicon.
Julsgaard B, Balling P, Hansen JL, Svane A, Larsen AN. Julsgaard B, et al. Among authors: larsen an. Nanotechnology. 2011 Oct 28;22(43):435401. doi: 10.1088/0957-4484/22/43/435401. Epub 2011 Oct 3. Nanotechnology. 2011. PMID: 21969305
Ab initio calculation of electronic and optical properties of metallic tin.
Pedersen TG, Modak P, Pedersen K, Christensen NE, Kjeldsen MM, Larsen AN. Pedersen TG, et al. Among authors: larsen an. J Phys Condens Matter. 2009 Mar 18;21(11):115502. doi: 10.1088/0953-8984/21/11/115502. Epub 2009 Feb 20. J Phys Condens Matter. 2009. PMID: 21693920
E center in silicon has a donor level in the band gap.
Larsen AN, Mesli A, Nielsen KB, Nielsen HK, Dobaczewski L, Adey J, Jones R, Palmer DW, Briddon PR, Oberg S. Larsen AN, et al. Phys Rev Lett. 2006 Sep 8;97(10):106402. doi: 10.1103/PhysRevLett.97.106402. Epub 2006 Sep 7. Phys Rev Lett. 2006. PMID: 17025833
Self-Diffusion in Amorphous Silicon by Local Bond Rearrangements.
Kirschbaum J, Teuber T, Donner A, Radek M, Bougeard D, Böttger R, Hansen JL, Larsen AN, Posselt M, Bracht H. Kirschbaum J, et al. Among authors: larsen an. Phys Rev Lett. 2018 Jun 1;120(22):225902. doi: 10.1103/PhysRevLett.120.225902. Phys Rev Lett. 2018. PMID: 29906135 Free article.
33 results