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Ultrahigh Photoresponsivity of W/Graphene/β-Ga2O3 Schottky Barrier Deep Ultraviolet Photodiodes.
ACS Nano. 2024 Feb 27;18(8):6558-6569. doi: 10.1021/acsnano.3c12415. Epub 2024 Feb 9.
ACS Nano. 2024.
PMID: 38334310
Physical Operations of a Self-Powered IZTO/β-Ga2O3 Schottky Barrier Diode Photodetector.
Labed M, Kim H, Park JH, Labed M, Meftah A, Sengouga N, Rim YS.
Labed M, et al.
Nanomaterials (Basel). 2022 Mar 24;12(7):1061. doi: 10.3390/nano12071061.
Nanomaterials (Basel). 2022.
PMID: 35407179
Free PMC article.
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Control of Ni/β-Ga2O3 Vertical Schottky Diode Output Parameters at Forward Bias by Insertion of a Graphene Layer.
Labed M, Sengouga N, Rim YS.
Labed M, et al.
Nanomaterials (Basel). 2022 Mar 1;12(5):827. doi: 10.3390/nano12050827.
Nanomaterials (Basel). 2022.
PMID: 35269314
Free PMC article.
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