Kyeongjae Cho - Search Results

Year	Number of Results
2005	1
2010	1
2011	3
2012	7
2013	6
2014	8
2015	7
2016	13
2017	10
2018	14
2019	11
2020	7
2021	12
2022	9
2023	5
2024	1

1

Mechanism of Fermi Level Pinning for Metal Contacts on Molybdenum Dichalcogenide.

Wang X, Hu Y, Kim SY, Cho K, Wallace RM. Wang X, et al. Among authors: cho k. ACS Appl Mater Interfaces. 2024 Mar 13;16(10):13258-13266. doi: 10.1021/acsami.3c18332. Epub 2024 Feb 29. ACS Appl Mater Interfaces. 2024. PMID: 38422472

2

Self-Organized Phase-Composite Nanocrystal Solids with Superior Charge Transport.

Kim J, Lee Y, Nguyen VL, Thu Huong CT, Kim D, Cho K, Sung MM. Kim J, et al. Among authors: cho k. ACS Appl Mater Interfaces. 2023 Nov 22;15(46):53835-53846. doi: 10.1021/acsami.3c12282. Epub 2023 Nov 8. ACS Appl Mater Interfaces. 2023. PMID: 37939291

3

Origins of Fermi Level Pinning for Ni and Ag Metal Contacts on Tungsten Dichalcogenides.

Wang X, Hu Y, Kim SY, Addou R, Cho K, Wallace RM. Wang X, et al. Among authors: cho k. ACS Nano. 2023 Oct 24;17(20):20353-20365. doi: 10.1021/acsnano.3c06494. Epub 2023 Oct 3. ACS Nano. 2023. PMID: 37788682

4

Suppressing Dendrite Growth and Side Reactions via Mechanically Robust Laponite-Based Electrolyte Membranes for Ultrastable Aqueous Zinc-Ion Batteries.

Tian S, Hwang T, Tian Y, Zhou Y, Zhou L, Milazzo T, Moon S, Malakpour Estalaki S, Wu S, Jian R, Balkus K, Luo T, Cho K, Xiong G. Tian S, et al. Among authors: cho k. ACS Nano. 2023 Aug 8;17(15):14930-14942. doi: 10.1021/acsnano.3c03500. Epub 2023 Jul 28. ACS Nano. 2023. PMID: 37505191

5

Effect of Lithium Substitution Ratio of Polymeric Binders on Interfacial Conduction within All-Solid-State Battery Anodes.

Shin DO, Kim H, Choi J, Kim JY, Kang SH, Park YS, Cho M, Lee YM, Cho K, Lee YG. Shin DO, et al. Among authors: cho k. ACS Appl Mater Interfaces. 2023 Mar 15;15(10):13131-13143. doi: 10.1021/acsami.3c00030. Epub 2023 Feb 15. ACS Appl Mater Interfaces. 2023. PMID: 36791219

6

Non-epitaxial single-crystal 2D material growth by geometric confinement.

Kim KS, Lee D, Chang CS, Seo S, Hu Y, Cha S, Kim H, Shin J, Lee JH, Lee S, Kim JS, Kim KH, Suh JM, Meng Y, Park BI, Lee JH, Park HS, Kum HS, Jo MH, Yeom GY, Cho K, Park JH, Bae SH, Kim J. Kim KS, et al. Among authors: cho k. Nature. 2023 Feb;614(7946):88-94. doi: 10.1038/s41586-022-05524-0. Epub 2023 Jan 18. Nature. 2023. PMID: 36653458

7

Spin-defect qubits in two-dimensional transition metal dichalcogenides operating at telecom wavelengths.

Lee Y, Hu Y, Lang X, Kim D, Li K, Ping Y, Fu KC, Cho K. Lee Y, et al. Among authors: cho k. Nat Commun. 2022 Dec 6;13(1):7501. doi: 10.1038/s41467-022-35048-0. Nat Commun. 2022. PMID: 36473851 Free PMC article.

8

Nanometer-Thick Oxide Semiconductor Transistor with Ultra-High Drain Current.

Lin Z, Si M, Askarpour V, Niu C, Charnas A, Shang Z, Zhang Y, Hu Y, Zhang Z, Liao PY, Cho K, Wang H, Lundstrom M, Maassen J, Ye PD. Lin Z, et al. Among authors: cho k. ACS Nano. 2022 Dec 27;16(12):21536-21545. doi: 10.1021/acsnano.2c10383. Epub 2022 Nov 29. ACS Nano. 2022. PMID: 36446079

9

Correction: Hafnium-zirconium oxide interface models with a semiconductor and metal for ferroelectric devices.

Chae K, Kummel AC, Cho K. Chae K, et al. Among authors: cho k. Nanoscale Adv. 2021 Aug 9;3(17):5122. doi: 10.1039/d1na90069b. eCollection 2021 Aug 25. Nanoscale Adv. 2021. PMID: 36136423 Free PMC article.

10

Remote Oxygen Scavenging of the Interfacial Oxide Layer in Ferroelectric Hafnium-Zirconium Oxide-Based Metal-Oxide-Semiconductor Structures.

Tasneem N, Kashyap H, Chae K, Park C, Lee PC, Lombardo SF, Afroze N, Tian M, Kumarasubramanian H, Hur J, Chen H, Chern W, Yu S, Bandaru P, Ravichandran J, Cho K, Kacher J, Kummel AC, Khan AI. Tasneem N, et al. Among authors: cho k. ACS Appl Mater Interfaces. 2022 Sep 28;14(38):43897-43906. doi: 10.1021/acsami.2c11736. Epub 2022 Sep 19. ACS Appl Mater Interfaces. 2022. PMID: 36121320

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