Kret S - Search Results

1

Phase-transition critical thickness of rocksalt Mg_xZn_1-xO layers.

Dłużewski P, Domagala JZ, Kret S, Jarosz D, Kryśko M, Teisseyre H. Dłużewski P, et al. Among authors: kret s. J Chem Phys. 2021 Apr 21;154(15):154701. doi: 10.1063/5.0042415. J Chem Phys. 2021. PMID: 33887922

2

Influence of the Si cap layer on the SiGe islands morphology.

Zak M, Laval JY, Dłuzewski PA, Kret S, Yam V, Bouchier D, Fossard F. Zak M, et al. Among authors: kret s. Micron. 2009 Jan;40(1):122-5. doi: 10.1016/j.micron.2008.02.010. Epub 2008 Feb 23. Micron. 2009. PMID: 18395456

3

TEM determination of directions of (Ga,Mn)As nanowires grown by MBE on GaAs(001) substrates.

Dłuzewski P, Sadowski J, Kret S, Dabrowski J, Sobczak K. Dłuzewski P, et al. Among authors: kret s. J Microsc. 2009 Nov;236(2):115-8. doi: 10.1111/j.1365-2818.2009.03255.x. J Microsc. 2009. PMID: 19903235

4

TEM characterization of MBE grown CdTe/ZnTe axial nanowires.

Dłuzewski P, Janik E, Kret S, Zaleszczyk W, Tang D, Karczewski G, Wojtowicz T. Dłuzewski P, et al. Among authors: kret s. J Microsc. 2010 Mar;237(3):337-40. doi: 10.1111/j.1365-2818.2009.03256.x. J Microsc. 2010. PMID: 20500392

5

Homogenous indium distribution in InGaN/GaN laser active structure grown by LP-MOCVD on bulk GaN crystal revealed by transmission electron microscopy and x-ray diffraction.

Kret S, Dłużewski P, Szczepańska A, Zak M, Czernecki R, Kryśko M, Leszczyński M, Maciejewski G. Kret S, et al. Nanotechnology. 2007 Nov 21;18(46):465707. doi: 10.1088/0957-4484/18/46/465707. Epub 2007 Oct 12. Nanotechnology. 2007. PMID: 21730494

6

Zn(1-x)Mg(x)Te nanowires grown by solid source molecular beam epitaxy.

Janik E, Dynowska E, Dłużewski P, Kret S, Presz A, Zaleszczyk W, Szuszkiewicz W, Morhange JF, Petroutchik A, Maćkowski S, Wojtowicz T. Janik E, et al. Among authors: kret s. Nanotechnology. 2008 Sep 10;19(36):365606. doi: 10.1088/0957-4484/19/36/365606. Epub 2008 Jul 28. Nanotechnology. 2008. PMID: 21828877

7

Influence of substrate nitridation temperature on epitaxial alignment of GaN nanowires to Si(111) substrate.

Wierzbicka A, Zytkiewicz ZR, Kret S, Borysiuk J, Dluzewski P, Sobanska M, Klosek K, Reszka A, Tchutchulashvili G, Cabaj A, Lusakowska E. Wierzbicka A, et al. Among authors: kret s. Nanotechnology. 2013 Jan 25;24(3):035703. doi: 10.1088/0957-4484/24/3/035703. Epub 2012 Dec 21. Nanotechnology. 2013. PMID: 23262581

8

Growth and optical properties of ZnO/Zn_1-xMg_xO quantum wells on ZnO microrods.

Pieniążek A , Teisseyre H , Jarosz D , Suffczyński J , Witkowski BS , Kret S , Boćkowski M , Reszka A , Godlewski M , Kozanecki A , Kowalski BJ . Pieniążek A , et al. Among authors: kret s. Nanoscale. 2019 Jan 31;11(5):2275-2281. doi: 10.1039/c8nr07065b. Nanoscale. 2019. PMID: 30657512

9

Bi incorporation and segregation in the MBE-grown GaAs-(Ga,Al)As-Ga(As,Bi) core-shell nanowires.

Sadowski J, Kaleta A, Kryvyi S, Janaszko D, Kurowska B, Bilska M, Wojciechowski T, Domagala JZ, Sanchez AM, Kret S. Sadowski J, et al. Among authors: kret s. Sci Rep. 2022 Apr 9;12(1):6007. doi: 10.1038/s41598-022-09847-w. Sci Rep. 2022. PMID: 35397635 Free PMC article.

10

Reconstruction of three-dimensional strain field in an asymmetrical curved core-shell hetero-nanowire.

Kryvyi S, Kret S, Domagala JZ, Wojnar P. Kryvyi S, et al. Among authors: kret s. Nanotechnology. 2023 Aug 18;34(44). doi: 10.1088/1361-6528/acebf6. Nanotechnology. 2023. PMID: 37524071

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