Kret S - Search Results

1

Role of Metal Vacancies in the Mechanism of Thermal Degradation of InGaN Quantum Wells.

Smalc-Koziorowska J, Grzanka E, Lachowski A, Hrytsak R, Grabowski M, Grzanka S, Kret S, Czernecki R, Turski H, Marona L, Markurt T, Schulz T, Albrecht M, Leszczynski M. Smalc-Koziorowska J, et al. Among authors: kret s. ACS Appl Mater Interfaces. 2021 Feb 17;13(6):7476-7484. doi: 10.1021/acsami.0c21293. Epub 2021 Feb 2. ACS Appl Mater Interfaces. 2021. PMID: 33529520

2

Homogenous indium distribution in InGaN/GaN laser active structure grown by LP-MOCVD on bulk GaN crystal revealed by transmission electron microscopy and x-ray diffraction.

Kret S, Dłużewski P, Szczepańska A, Zak M, Czernecki R, Kryśko M, Leszczyński M, Maciejewski G. Kret S, et al. Nanotechnology. 2007 Nov 21;18(46):465707. doi: 10.1088/0957-4484/18/46/465707. Epub 2007 Oct 12. Nanotechnology. 2007. PMID: 21730494

3

Selective Growth of van der Waals Heterostructures Enabled by Electron-Beam Irradiation.

Sitek J, Czerniak-Łosiewicz K, Gertych AP, Giza M, Dąbrowski P, Rogala M, Wilczyński K, Kaleta A, Kret S, Conran BR, Wang X, McAleese C, Macha M, Radenović A, Zdrojek M, Pasternak I, Strupiński W. Sitek J, et al. Among authors: kret s. ACS Appl Mater Interfaces. 2023 Jul 19;15(28):33838-33847. doi: 10.1021/acsami.3c02892. Epub 2023 Jul 7. ACS Appl Mater Interfaces. 2023. PMID: 37418753 Free PMC article.

4

Oxidation of MBE-Grown ZnTe and ZnTe/Zn Nanowires and Their Structural Properties.

Gas K, Kret S, Zaleszczyk W, Kamińska E, Sawicki M, Wojtowicz T, Szuszkiewicz W. Gas K, et al. Among authors: kret s. Materials (Basel). 2021 Sep 13;14(18):5252. doi: 10.3390/ma14185252. Materials (Basel). 2021. PMID: 34576476 Free PMC article.

5

Piezoelectric field around threading dislocation in GaN determined on the basis of high-resolution transmission electron microscopy image.

Maciejewski G, Kret S, Ruterana P. Maciejewski G, et al. Among authors: kret s. J Microsc. 2006 Sep;223(Pt 3):212-5. doi: 10.1111/j.1365-2818.2006.01622.x. J Microsc. 2006. PMID: 17059532

6

Influence of the Si cap layer on the SiGe islands morphology.

Zak M, Laval JY, Dłuzewski PA, Kret S, Yam V, Bouchier D, Fossard F. Zak M, et al. Among authors: kret s. Micron. 2009 Jan;40(1):122-5. doi: 10.1016/j.micron.2008.02.010. Epub 2008 Feb 23. Micron. 2009. PMID: 18395456

7

TEM determination of directions of (Ga,Mn)As nanowires grown by MBE on GaAs(001) substrates.

Dłuzewski P, Sadowski J, Kret S, Dabrowski J, Sobczak K. Dłuzewski P, et al. Among authors: kret s. J Microsc. 2009 Nov;236(2):115-8. doi: 10.1111/j.1365-2818.2009.03255.x. J Microsc. 2009. PMID: 19903235

8

Influence of substrate nitridation temperature on epitaxial alignment of GaN nanowires to Si(111) substrate.

Wierzbicka A, Zytkiewicz ZR, Kret S, Borysiuk J, Dluzewski P, Sobanska M, Klosek K, Reszka A, Tchutchulashvili G, Cabaj A, Lusakowska E. Wierzbicka A, et al. Among authors: kret s. Nanotechnology. 2013 Jan 25;24(3):035703. doi: 10.1088/0957-4484/24/3/035703. Epub 2012 Dec 21. Nanotechnology. 2013. PMID: 23262581

9

Growth and optical properties of ZnO/Zn_1-xMg_xO quantum wells on ZnO microrods.

Pieniążek A , Teisseyre H , Jarosz D , Suffczyński J , Witkowski BS , Kret S , Boćkowski M , Reszka A , Godlewski M , Kozanecki A , Kowalski BJ . Pieniążek A , et al. Among authors: kret s. Nanoscale. 2019 Jan 31;11(5):2275-2281. doi: 10.1039/c8nr07065b. Nanoscale. 2019. PMID: 30657512

10

Phase-transition critical thickness of rocksalt Mg_xZn_1-xO layers.

Dłużewski P, Domagala JZ, Kret S, Jarosz D, Kryśko M, Teisseyre H. Dłużewski P, et al. Among authors: kret s. J Chem Phys. 2021 Apr 21;154(15):154701. doi: 10.1063/5.0042415. J Chem Phys. 2021. PMID: 33887922

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