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Radiation Hardness of Silicon Carbide upon High-Temperature Electron and Proton Irradiation.
Materials (Basel). 2021 Aug 31;14(17):4976. doi: 10.3390/ma14174976.
Materials (Basel). 2021.
PMID: 34501066
Free PMC article.
Review.
Features of the Carrier Concentration Determination during Irradiation of Wide-Gap Semiconductors: The Case Study of Silicon Carbide.
Lebedev AA, Kozlovski VV, Davydovskaya KS, Kuzmin RA, Levinshtein ME, Strel'chuk AM.
Lebedev AA, et al. Among authors: kozlovski vv.
Materials (Basel). 2022 Dec 3;15(23):8637. doi: 10.3390/ma15238637.
Materials (Basel). 2022.
PMID: 36500133
Free PMC article.
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Positron annihilation on defects in silicon irradiated with 15 MeV protons.
Arutyunov NY, Elsayed M, Krause-Rehberg R, Emtsev VV, Oganesyan GA, Kozlovski VV.
Arutyunov NY, et al. Among authors: kozlovski vv.
J Phys Condens Matter. 2013 Jan 23;25(3):035801. doi: 10.1088/0953-8984/25/3/035801. Epub 2012 Dec 10.
J Phys Condens Matter. 2013.
PMID: 23221281
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