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Optical gain in 1.3-μm electrically driven dilute nitride VCSOAs.
Lisesivdin SB, Khan NA, Mazzucato S, Balkan N, Adams MJ, Korpijärvi VM, Guina M, Mezosi G, Sorel M. Lisesivdin SB, et al. Among authors: korpijarvi vm. Nanoscale Res Lett. 2014 Jan 13;9(1):22. doi: 10.1186/1556-276X-9-22. Nanoscale Res Lett. 2014. PMID: 24417791 Free PMC article.
Optically-pumped dilute nitride spin-VCSEL.
Schires K, Al Seyab R, Hurtado A, Korpijärvi VM, Guina M, Henning ID, Adams MJ. Schires K, et al. Among authors: korpijarvi vm. Opt Express. 2012 Feb 13;20(4):3550-5. doi: 10.1364/OE.20.003550. Opt Express. 2012. PMID: 22418114 Free article.
Passively mode-locked GaInNAs disk laser operating at 1220 nm.
Rautiainen J, Korpijärvi VM, Puustinen J, Guina M, Okhotnikov O. Rautiainen J, et al. Among authors: korpijarvi vm. Opt Express. 2008 Sep 29;16(20):15964-9. doi: 10.1364/oe.16.015964. Opt Express. 2008. PMID: 18825234 Free article.
615 nm GaInNAs VECSEL with output power above 10 W.
Kantola E, Leinonen T, Penttinen JP, Korpijärvi VM, Guina M. Kantola E, et al. Among authors: korpijarvi vm. Opt Express. 2015 Aug 10;23(16):20280-7. doi: 10.1364/OE.23.020280. Opt Express. 2015. PMID: 26367883 Free article.
Oxidation of the GaAs semiconductor at the Al2O3/GaAs junction.
Tuominen M, Yasir M, Lång J, Dahl J, Kuzmin M, Mäkelä J, Punkkinen M, Laukkanen P, Kokko K, Schulte K, Punkkinen R, Korpijärvi VM, Polojärvi V, Guina M. Tuominen M, et al. Among authors: korpijarvi vm. Phys Chem Chem Phys. 2015 Mar 14;17(10):7060-6. doi: 10.1039/c4cp05972g. Phys Chem Chem Phys. 2015. PMID: 25686555
11 results