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Triethanolamine doped multilayer MoS2 field effect transistors.
Phys Chem Chem Phys. 2017 May 24;19(20):13133-13139. doi: 10.1039/c7cp00589j.
Phys Chem Chem Phys. 2017.
PMID: 28489103
Capacitance-voltage analysis of electrical properties for WSe2 field effect transistors with high-k encapsulation layer.
Ko SP, Shin JM, Jang HK, You MY, Jin JE, Choi M, Cho J, Kim GT.
Ko SP, et al.
Nanotechnology. 2018 Feb 9;29(6):065703. doi: 10.1088/1361-6528/aaa1d7.
Nanotechnology. 2018.
PMID: 29239861
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Few-Layer WSe2 Schottky Junction-Based Photovoltaic Devices through Site-Selective Dual Doping.
Ko S, Na J, Moon YS, Zschieschang U, Acharya R, Klauk H, Kim GT, Burghard M, Kern K.
Ko S, et al.
ACS Appl Mater Interfaces. 2017 Dec 13;9(49):42912-42918. doi: 10.1021/acsami.7b13395. Epub 2017 Dec 4.
ACS Appl Mater Interfaces. 2017.
PMID: 29200255
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