Klimeck G - Search Results

1

Complementary Black Phosphorus Tunneling Field-Effect Transistors.

Wu P, Ameen T, Zhang H, Bendersky LA, Ilatikhameneh H, Klimeck G, Rahman R, Davydov AV, Appenzeller J. Wu P, et al. Among authors: klimeck g. ACS Nano. 2019 Jan 22;13(1):377-385. doi: 10.1021/acsnano.8b06441. Epub 2018 Dec 21. ACS Nano. 2019. PMID: 30563322 Free PMC article.

2

Effect of diameter variation on electrical characteristics of Schottky barrier indium arsenide nanowire field-effect transistors.

Razavieh A, Mohseni PK, Jung K, Mehrotra S, Das S, Suslov S, Li X, Klimeck G, Janes DB, Appenzeller J. Razavieh A, et al. Among authors: klimeck g. ACS Nano. 2014 Jun 24;8(6):6281-7. doi: 10.1021/nn5017567. Epub 2014 May 28. ACS Nano. 2014. PMID: 24848303

3

Electrically Tunable Bandgaps in Bilayer MoS₂.

Chu T, Ilatikhameneh H, Klimeck G, Rahman R, Chen Z. Chu T, et al. Among authors: klimeck g. Nano Lett. 2015 Dec 9;15(12):8000-7. doi: 10.1021/acs.nanolett.5b03218. Epub 2015 Nov 13. Nano Lett. 2015. PMID: 26560813

4

Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors.

Ameen TA, Ilatikhameneh H, Klimeck G, Rahman R. Ameen TA, et al. Among authors: klimeck g. Sci Rep. 2016 Jun 27;6:28515. doi: 10.1038/srep28515. Sci Rep. 2016. PMID: 27345020 Free PMC article.

5

Saving Moore's Law Down To 1 nm Channels With Anisotropic Effective Mass.

Ilatikhameneh H, Ameen T, Novakovic B, Tan Y, Klimeck G, Rahman R. Ilatikhameneh H, et al. Among authors: klimeck g. Sci Rep. 2016 Aug 19;6:31501. doi: 10.1038/srep31501. Sci Rep. 2016. PMID: 27538849 Free PMC article.

6

Utilizing the unique properties of nanowire MOSFETs for RF applications.

Razavieh A, Mehrotra S, Singh N, Klimeck G, Janes D, Appenzeller J. Razavieh A, et al. Among authors: klimeck g. Nano Lett. 2013 Apr 10;13(4):1549-54. doi: 10.1021/nl3047078. Epub 2013 Mar 12. Nano Lett. 2013. PMID: 23464859

7

Observation of 1D behavior in Si nanowires: toward high-performance TFETs.

Salazar RB, Mehrotra SR, Klimeck G, Singh N, Appenzeller J. Salazar RB, et al. Among authors: klimeck g. Nano Lett. 2012 Nov 14;12(11):5571-5. doi: 10.1021/nl3025664. Epub 2012 Oct 8. Nano Lett. 2012. PMID: 23030672

8

WSe₂ Homojunction Devices: Electrostatically Configurable as Diodes, MOSFETs, and Tunnel FETs for Reconfigurable Computing.

Pang CS, Chen CY, Ameen T, Zhang S, Ilatikhameneh H, Rahman R, Klimeck G, Chen Z. Pang CS, et al. Among authors: klimeck g. Small. 2019 Oct;15(41):e1902770. doi: 10.1002/smll.201902770. Epub 2019 Aug 25. Small. 2019. PMID: 31448564

9

Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot.

Ameen TA, Ilatikhameneh H, Tankasala A, Hsueh Y, Charles J, Fonseca J, Povolotskyi M, Kim JO, Krishna S, Allen MS, Allen JW, Rahman R, Klimeck G. Ameen TA, et al. Among authors: klimeck g. Beilstein J Nanotechnol. 2018 Apr 4;9:1075-1084. doi: 10.3762/bjnano.9.99. eCollection 2018. Beilstein J Nanotechnol. 2018. PMID: 29719758 Free PMC article.

10

MoS₂ for Enhanced Electrical Performance of Ultrathin Copper Films.

Shen T, Valencia D, Wang Q, Wang KC, Povolotskyi M, Kim MJ, Klimeck G, Chen Z, Appenzeller J. Shen T, et al. Among authors: klimeck g. ACS Appl Mater Interfaces. 2019 Aug 7;11(31):28345-28351. doi: 10.1021/acsami.9b03381. Epub 2019 Jul 22. ACS Appl Mater Interfaces. 2019. PMID: 31287653

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