Klein A - Search Results

1

Reversible Barrier Switching of ZnO/RuO₂ Schottky Diodes.

Wendel P, Dietz D, Deuermeier J, Klein A. Wendel P, et al. Among authors: klein a. Materials (Basel). 2021 May 20;14(10):2678. doi: 10.3390/ma14102678. Materials (Basel). 2021. PMID: 34065310 Free PMC article.

2

Band Alignment Engineering at Cu2O/ZnO Heterointerfaces.

Siol S, Hellmann JC, Tilley SD, Graetzel M, Morasch J, Deuermeier J, Jaegermann W, Klein A. Siol S, et al. Among authors: klein a. ACS Appl Mater Interfaces. 2016 Aug 24;8(33):21824-31. doi: 10.1021/acsami.6b07325. Epub 2016 Aug 15. ACS Appl Mater Interfaces. 2016. PMID: 27452037

3

Multi-Level Cell Properties of a Bilayer Cu₂O/Al₂O₃ Resistive Switching Device.

Deuermeier J, Kiazadeh A, Klein A, Martins R, Fortunato E. Deuermeier J, et al. Among authors: klein a. Nanomaterials (Basel). 2019 Feb 19;9(2):289. doi: 10.3390/nano9020289. Nanomaterials (Basel). 2019. PMID: 30791401 Free PMC article.

4

Transparent Conducting Oxides for Photovoltaics: Manipulation of Fermi Level, Work Function and Energy Band Alignment.

Klein A, Körber C, Wachau A, Säuberlich F, Gassenbauer Y, Harvey SP, Proffit DE, Mason TO. Klein A, et al. Materials (Basel). 2010 Nov 2;3(11):4892-4914. doi: 10.3390/ma3114892. Materials (Basel). 2010. PMID: 28883359 Free PMC article.

5

Electrical Properties of Low-Temperature Processed Sn-Doped In₂O₃ Thin Films: The Role of Microstructure and Oxygen Content and the Potential of Defect Modulation Doping.

Deyu GK, Hunka J, Roussel H, Brötz J, Bellet D, Klein A. Deyu GK, et al. Among authors: klein a. Materials (Basel). 2019 Jul 11;12(14):2232. doi: 10.3390/ma12142232. Materials (Basel). 2019. PMID: 31373290 Free PMC article.

6

In Situ Hall Effect Monitoring of Vacuum Annealing of In₂O₃:H Thin Films.

Wardenga HF, Frischbier MV, Morales-Masis M, Klein A. Wardenga HF, et al. Among authors: klein a. Materials (Basel). 2015 Feb 6;8(2):561-574. doi: 10.3390/ma8020561. Materials (Basel). 2015. PMID: 28787957 Free PMC article.

7

Chemical and electronic properties of the ITO/Al(2)O(3) interface.

Gassenbauer Y, Wachau A, Klein A. Gassenbauer Y, et al. Among authors: klein a. Phys Chem Chem Phys. 2009 May 7;11(17):3049-54. doi: 10.1039/b822848e. Epub 2009 Mar 11. Phys Chem Chem Phys. 2009. PMID: 19370198

8

SnO₂ Films Deposited by Ultrasonic Spray Pyrolysis: Influence of Al Incorporation on the Properties.

Deyu GK, Muñoz-Rojas D, Rapenne L, Deschanvres JL, Klein A, Jiménez C, Bellet D. Deyu GK, et al. Among authors: klein a. Molecules. 2019 Jul 31;24(15):2797. doi: 10.3390/molecules24152797. Molecules. 2019. PMID: 31370316 Free PMC article.

9

Electronic and chemical properties of tin-doped indium oxide (ITO) surfaces and ITO/ZnPc interfaces studied in-situ by photoelectron spectroscopy.

Gassenbauer Y, Klein A. Gassenbauer Y, et al. Among authors: klein a. J Phys Chem B. 2006 Mar 16;110(10):4793-801. doi: 10.1021/jp056640b. J Phys Chem B. 2006. PMID: 16526716

10

Orientation dependent ionization potential of In2O3: a natural source for inhomogeneous barrier formation at electrode interfaces in organic electronics.

Hohmann MV, Ágoston P, Wachau A, Bayer TJ, Brötz J, Albe K, Klein A. Hohmann MV, et al. Among authors: klein a. J Phys Condens Matter. 2011 Aug 24;23(33):334203. doi: 10.1088/0953-8984/23/33/334203. Epub 2011 Aug 3. J Phys Condens Matter. 2011. PMID: 21813943

With the given deposition conditions an ionization potential of 7.7 eV is obtained, which is attributed to a surface termination stabilized by oxygen dimers. This orientation dependence also explains the lower ionization potentials observed for In(2)O(3) compared to Sn-dop …

With the given deposition conditions an ionization potential of 7.7 eV is obtained, which is attributed to a surface termination stab …

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