Orientation dependent ionization potential of In2O3: a natural source for inhomogeneous barrier formation at electrode interfaces in organic electronics.
Hohmann MV, Ágoston P, Wachau A, Bayer TJ, Brötz J, Albe K, Klein A.
Hohmann MV, et al. Among authors: klein a.
J Phys Condens Matter. 2011 Aug 24;23(33):334203. doi: 10.1088/0953-8984/23/33/334203. Epub 2011 Aug 3.
J Phys Condens Matter. 2011.
PMID: 21813943
With the given deposition conditions an ionization potential of 7.7 eV is obtained, which is attributed to a surface termination stabilized by oxygen dimers. This orientation dependence also explains the lower ionization potentials observed for In(2)O(3) compared to Sn-dop …
With the given deposition conditions an ionization potential of 7.7 eV is obtained, which is attributed to a surface termination stab …