Kim S - Search Results

1

Robust Resistive Switching Constancy and Quantum Conductance in High-k Dielectric-Based Memristor for Neuromorphic Engineering.

Ismail M, Mahata C, Kang M, Kim S. Ismail M, et al. Among authors: kim s. Nanoscale Res Lett. 2022 Jun 24;17(1):61. doi: 10.1186/s11671-022-03699-z. Nanoscale Res Lett. 2022. PMID: 35749003 Free PMC article.

2

Power- and Low-Resistance-State-Dependent, Bipolar Reset-Switching Transitions in SiN-Based Resistive Random-Access Memory.

Kim S, Park BG. Kim S, et al. Nanoscale Res Lett. 2016 Dec;11(1):360. doi: 10.1186/s11671-016-1572-9. Epub 2016 Aug 12. Nanoscale Res Lett. 2016. PMID: 27518231 Free PMC article.

3

Dual Functions of V/SiO_x/AlO_y/p⁺⁺Si Device as Selector and Memory.

Kim S, Lin CY, Kim MH, Kim TH, Kim H, Chen YC, Chang YF, Park BG. Kim S, et al. Among authors: kim h, kim th, kim mh. Nanoscale Res Lett. 2018 Aug 23;13(1):252. doi: 10.1186/s11671-018-2660-9. Nanoscale Res Lett. 2018. PMID: 30141145 Free PMC article.

4

Effect of Bilayer CeO_2-x/ZnO and ZnO/CeO_2-x Heterostructures and Electroforming Polarity on Switching Properties of Non-volatile Memory.

Ismail M, Talib I, Rana AM, Akbar T, Jabeen S, Lee J, Kim S. Ismail M, et al. Among authors: kim s. Nanoscale Res Lett. 2018 Oct 11;13(1):318. doi: 10.1186/s11671-018-2738-4. Nanoscale Res Lett. 2018. PMID: 30311009 Free PMC article.

5

Neuronal dynamics in HfO_x/AlO_y-based homeothermic synaptic memristors with low-power and homogeneous resistive switching.

Kim S , Chen J , Chen YC , Kim MH , Kim H , Kwon MW , Hwang S , Ismail M , Li Y , Miao XS , Chang YF , Park BG . Kim S , et al. Among authors: kim h, kim mh. Nanoscale. 2018 Dec 20;11(1):237-245. doi: 10.1039/c8nr06694a. Nanoscale. 2018. PMID: 30534752

6

Eradicating negative-Set behavior of TiO₂-based devices by inserting an oxygen vacancy rich zirconium oxide layer for data storage applications.

Ismail M, Hashmi A, Rana AM, Kim S. Ismail M, et al. Among authors: kim s. Nanotechnology. 2020 Aug 7;31(32):325201. doi: 10.1088/1361-6528/ab8b8e. Epub 2020 Apr 21. Nanotechnology. 2020. PMID: 32316002

7

Memristive and Synaptic Characteristics of Nitride-Based Heterostructures on Si Substrate.

Rahmani MK, Kim MH, Hussain F, Abbas Y, Ismail M, Hong K, Mahata C, Choi C, Park BG, Kim S. Rahmani MK, et al. Among authors: kim s, kim mh. Nanomaterials (Basel). 2020 May 22;10(5):994. doi: 10.3390/nano10050994. Nanomaterials (Basel). 2020. PMID: 32455892 Free PMC article.

8

Synaptic Characteristics of Amorphous Boron Nitride-Based Memristors on a Highly Doped Silicon Substrate for Neuromorphic Engineering.

Lee J, Ryu JH, Kim B, Hussain F, Mahata C, Sim E, Ismail M, Abbas Y, Abbas H, Lee DK, Kim MH, Kim Y, Choi C, Park BG, Kim S. Lee J, et al. Among authors: kim b, kim s, kim mh, kim y. ACS Appl Mater Interfaces. 2020 Jul 29;12(30):33908-33916. doi: 10.1021/acsami.0c07867. Epub 2020 Jul 15. ACS Appl Mater Interfaces. 2020. PMID: 32608233

9

Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO₂/Al₂O₃/HfO₂ Based Memristor on ITO Electrode.

Mahata C, Kang M, Kim S. Mahata C, et al. Among authors: kim s. Nanomaterials (Basel). 2020 Oct 20;10(10):2069. doi: 10.3390/nano10102069. Nanomaterials (Basel). 2020. PMID: 33092042 Free PMC article.

10

ab initio study of oxygen vacancy effects on structural, electronic and thermoelectric behavior of AZr_1-xM_xO₃ (A = Ba, Ca, Sr; M= Al, Cu, x = 0.25) for application of memory devices.

Khera EA, Ullah H, Imran M, Niaz NA, Hussain F, Khalil RMA, Resheed U, Rana AM, Hussain MI, Mahata C, Kim S. Khera EA, et al. Among authors: kim s. J Mol Graph Model. 2021 Mar;103:107825. doi: 10.1016/j.jmgm.2020.107825. Epub 2020 Dec 21. J Mol Graph Model. 2021. PMID: 33429230

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