Kim J - Search Results

1

Atomic Layer Deposition of Silicon Nitride Thin Films: A Review of Recent Progress, Challenges, and Outlooks.

Meng X, Byun YC, Kim HS, Lee JS, Lucero AT, Cheng L, Kim J. Meng X, et al. Among authors: kim hs, kim j. Materials (Basel). 2016 Dec 12;9(12):1007. doi: 10.3390/ma9121007. Materials (Basel). 2016. PMID: 28774125 Free PMC article. Review.

2

Metal contacts on physical vapor deposited monolayer MoS2.

Gong C, Huang C, Miller J, Cheng L, Hao Y, Cobden D, Kim J, Ruoff RS, Wallace RM, Cho K, Xu X, Chabal YJ. Gong C, et al. Among authors: kim j. ACS Nano. 2013 Dec 23;7(12):11350-7. doi: 10.1021/nn4052138. Epub 2013 Nov 14. ACS Nano. 2013. PMID: 24219632

3

Atomic layer deposition of a high-k dielectric on MoS2 using trimethylaluminum and ozone.

Cheng L, Qin X, Lucero AT, Azcatl A, Huang J, Wallace RM, Cho K, Kim J. Cheng L, et al. Among authors: kim j. ACS Appl Mater Interfaces. 2014 Aug 13;6(15):11834-8. doi: 10.1021/am5032105. Epub 2014 Jul 21. ACS Appl Mater Interfaces. 2014. PMID: 25025335 Free PMC article.

4

HfSe2 thin films: 2D transition metal dichalcogenides grown by molecular beam epitaxy.

Yue R, Barton AT, Zhu H, Azcatl A, Pena LF, Wang J, Peng X, Lu N, Cheng L, Addou R, McDonnell S, Colombo L, Hsu JW, Kim J, Kim MJ, Wallace RM, Hinkle CL. Yue R, et al. Among authors: kim j, kim mj. ACS Nano. 2015 Jan 27;9(1):474-80. doi: 10.1021/nn5056496. Epub 2014 Dec 22. ACS Nano. 2015. PMID: 25496648

5

Al2O3 on Black Phosphorus by Atomic Layer Deposition: An in Situ Interface Study.

Zhu H, McDonnell S, Qin X, Azcatl A, Cheng L, Addou R, Kim J, Ye PD, Wallace RM. Zhu H, et al. Among authors: kim j. ACS Appl Mater Interfaces. 2015 Jun 17;7(23):13038-43. doi: 10.1021/acsami.5b03192. Epub 2015 Jun 8. ACS Appl Mater Interfaces. 2015. PMID: 26016806

6

Partially Fluorinated Graphene: Structural and Electrical Characterization.

Cheng L, Jandhyala S, Mordi G, Lucero AT, Huang J, Azcatl A, Addou R, Wallace RM, Colombo L, Kim J. Cheng L, et al. Among authors: kim j. ACS Appl Mater Interfaces. 2016 Feb;8(7):5002-8. doi: 10.1021/acsami.5b11701. Epub 2016 Feb 10. ACS Appl Mater Interfaces. 2016. PMID: 26820099

7

Remote Plasma Oxidation and Atomic Layer Etching of MoS2.

Zhu H, Qin X, Cheng L, Azcatl A, Kim J, Wallace RM. Zhu H, et al. Among authors: kim j. ACS Appl Mater Interfaces. 2016 Jul 27;8(29):19119-26. doi: 10.1021/acsami.6b04719. Epub 2016 Jul 14. ACS Appl Mater Interfaces. 2016. PMID: 27386734

8

Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure.

Azcatl A, Qin X, Prakash A, Zhang C, Cheng L, Wang Q, Lu N, Kim MJ, Kim J, Cho K, Addou R, Hinkle CL, Appenzeller J, Wallace RM. Azcatl A, et al. Among authors: kim j, kim mj. Nano Lett. 2016 Sep 14;16(9):5437-43. doi: 10.1021/acs.nanolett.6b01853. Epub 2016 Aug 9. Nano Lett. 2016. PMID: 27494551

9

Impurity and silicate formation dependence on O₃ pulse time and the growth temperature in atomic-layer-deposited La₂O₃ thin films.

Park TJ, Byun YC, Wallace RM, Kim J. Park TJ, et al. Among authors: kim j. J Chem Phys. 2017 Feb 7;146(5):052821. doi: 10.1063/1.4975083. J Chem Phys. 2017. PMID: 28178843

10

Sub-10 nm Tunable Hybrid Dielectric Engineering on MoS₂ for Two-Dimensional Material-Based Devices.

Cheng L, Lee J, Zhu H, Ravichandran AV, Wang Q, Lucero AT, Kim MJ, Wallace RM, Colombo L, Kim J. Cheng L, et al. Among authors: kim j, kim mj. ACS Nano. 2017 Oct 24;11(10):10243-10252. doi: 10.1021/acsnano.7b04813. Epub 2017 Aug 30. ACS Nano. 2017. PMID: 28832118

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