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Remote Plasma Oxidation and Atomic Layer Etching of MoS2.
Zhu H, Qin X, Cheng L, Azcatl A, Kim J, Wallace RM. Zhu H, et al. Among authors: kim j. ACS Appl Mater Interfaces. 2016 Jul 27;8(29):19119-26. doi: 10.1021/acsami.6b04719. Epub 2016 Jul 14. ACS Appl Mater Interfaces. 2016. PMID: 27386734
Metal contacts on physical vapor deposited monolayer MoS2.
Gong C, Huang C, Miller J, Cheng L, Hao Y, Cobden D, Kim J, Ruoff RS, Wallace RM, Cho K, Xu X, Chabal YJ. Gong C, et al. Among authors: kim j. ACS Nano. 2013 Dec 23;7(12):11350-7. doi: 10.1021/nn4052138. Epub 2013 Nov 14. ACS Nano. 2013. PMID: 24219632
Silicon interfacial passivation layer chemistry for high-k/InP interfaces.
Dong H, Cabrera W, Qin X, Brennan B, Zhernokletov D, Hinkle CL, Kim J, Chabal YJ, Wallace RM. Dong H, et al. Among authors: kim j. ACS Appl Mater Interfaces. 2014 May 28;6(10):7340-5. doi: 10.1021/am500752u. Epub 2014 Apr 30. ACS Appl Mater Interfaces. 2014. PMID: 24750024
Seeding atomic layer deposition of alumina on graphene with yttria.
Dahal A, Addou R, Azcatl A, Coy-Diaz H, Lu N, Peng X, de Dios F, Kim J, Kim MJ, Wallace RM, Batzill M. Dahal A, et al. Among authors: kim j, kim mj. ACS Appl Mater Interfaces. 2015 Jan 28;7(3):2082-7. doi: 10.1021/am508154n. Epub 2015 Jan 15. ACS Appl Mater Interfaces. 2015. PMID: 25556522
Partially Fluorinated Graphene: Structural and Electrical Characterization.
Cheng L, Jandhyala S, Mordi G, Lucero AT, Huang J, Azcatl A, Addou R, Wallace RM, Colombo L, Kim J. Cheng L, et al. Among authors: kim j. ACS Appl Mater Interfaces. 2016 Feb;8(7):5002-8. doi: 10.1021/acsami.5b11701. Epub 2016 Feb 10. ACS Appl Mater Interfaces. 2016. PMID: 26820099
129,693 results
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