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Low Temperature Thermal Atomic Layer Deposition of Aluminum Nitride Using Hydrazine as the Nitrogen Source.
Jung YC, Hwang SM, Le DN, Kondusamy ALN, Mohan J, Kim SW, Kim JH, Lucero AT, Ravichandran A, Kim HS, Kim SJ, Choi R, Ahn J, Alvarez D, Spiegelman J, Kim J. Jung YC, et al. Among authors: kim sw, kim sj, kim hs, kim j, kim jh. Materials (Basel). 2020 Jul 31;13(15):3387. doi: 10.3390/ma13153387. Materials (Basel). 2020. PMID: 32751836 Free PMC article.
Investigation of the Physical Properties of Plasma Enhanced Atomic Layer Deposited Silicon Nitride as Etch Stopper.
Kim HS, Meng X, Kim SJ, Lucero AT, Cheng L, Byun YC, Lee JS, Hwang SM, Kondusamy ALN, Wallace RM, Goodman G, Wan AS, Telgenhoff M, Hwang BK, Kim J. Kim HS, et al. Among authors: kim sj, kim j. ACS Appl Mater Interfaces. 2018 Dec 26;10(51):44825-44833. doi: 10.1021/acsami.8b15291. Epub 2018 Dec 11. ACS Appl Mater Interfaces. 2018. PMID: 30485061
Stress-Induced Crystallization of Thin Hf1- XZr XO2 Films: The Origin of Enhanced Energy Density with Minimized Energy Loss for Lead-Free Electrostatic Energy Storage Applications.
Kim SJ, Mohan J, Lee JS, Kim HS, Lee J, Young CD, Colombo L, Summerfelt SR, San T, Kim J. Kim SJ, et al. Among authors: kim hs, kim j. ACS Appl Mater Interfaces. 2019 Feb 6;11(5):5208-5214. doi: 10.1021/acsami.8b17211. Epub 2019 Jan 28. ACS Appl Mater Interfaces. 2019. PMID: 30652846
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